A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

An integrated circuit architecture and circuitry is defined by a die structure with a plurality of exposed conductive pads arranged in a grid of rows and columns. The die structure has a first operating frequency region with a first transmit and receive chain, and a second operating frequency region with a second transmit chain and a second receive chain. There is a shared region of the die structure defined by an overlapping segment of the first operating frequency region and the second operating frequency region with a shared power supply input conductive pad connected to the first transmit chain, the second transmit chain, the first receive chain, and the second receive chain, and a shared power detection output conductive pad connected to the first transmit chain and the second transmit chain.

An integrated circuit architecture and circuitry is defined by a die structure with a plurality of exposed conductive pads arranged in a grid of rows and columns. The die structure has a first operating frequency region with a first transmit and receive chain, and a second operating frequency region with a second transmit chain and a second receive chain. There is a shared region of the die structure defined by an overlapping segment of the first operating frequency region and the second operating frequency region with a shared power supply input conductive pad connected to the first transmit chain, the second transmit chain, the first receive chain, and the second receive chain, and a shared power detection output conductive pad connected to the first transmit chain and the second transmit chain.

A power amplifier module that includes a power amplifier and a controller is presented herein. The power amplifier module may include a set of transistor stages and a plurality of bias circuits. At least one transistor stage from the set of transistor stages may be in electrical communication with a first bias circuit and a second bias circuit from the plurality of bias circuits. The first bias circuit can be configured to apply a first bias voltage to the at least one transistor stage and the second bias circuit can be configured to apply a second bias voltage to the at least one transistor stage. The controller may be configured to activate one of the first bias circuit and the second bias circuit.

A power amplifier module that includes a power amplifier and a controller is presented herein. The power amplifier module may include a set of transistor stages and a plurality of bias circuits. At least one transistor stage from the set of transistor stages may be in electrical communication with a first bias circuit and a second bias circuit from the plurality of bias circuits. The first bias circuit can be configured to apply a first bias voltage to the at least one transistor stage and the second bias circuit can be configured to apply a second bias voltage to the at least one transistor stage. The controller may be configured to activate one of the first bias circuit and the second bias circuit.

Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

A system may include a charge pump configured to operate in a plurality of modes including a first mode in which the ratio of an output voltage to an input voltage of the charge pump is a first ratio and a second mode in which the ratio is a second ratio and a controller configured to limit current flowing between a power source of the charge pump to the charge pump, wherein the power source provides the input voltage, by limiting a transfer of charge between the power source and the charge pump during a switching cycle of the charge pump responsive to a change in operation between modes of the plurality of modes.

A system may include a charge pump configured to operate in a plurality of modes including a first mode in which the ratio of an output voltage to an input voltage of the charge pump is a first ratio and a second mode in which the ratio is a second ratio and a controller configured to limit current flowing between a power source of the charge pump to the charge pump, wherein the power source provides the input voltage, by limiting a transfer of charge between the power source and the charge pump during a switching cycle of the charge pump responsive to a change in operation between modes of the plurality of modes.

An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.