A radio frequency circuit includes a carrier amplifier, a peak amplifier, a transformer, and an impedance converting circuit. One end of an input coil is connected to an output of the carrier amplifier, one end of an output coil is connected to an output terminal. The impedance converting circuit includes main and auxiliary lines. One end of the main line is connected to an output of the peak amplifier, and the other end of the main line is connected to the other end of the input coil. One end of the auxiliary line is connected to the one end of the main line, and the other end of the auxiliary line is connected to ground. A first direction from the one end to the other end of the main line, and a second direction from the other end to the one end of the auxiliary line (302) are the same.

A high voltage driver is provided that includes a PMOS stack of transistors arranged in series between a power supply node and an output node. The high voltage driver also includes an NMOS stack of transistors arranged between the output node and ground.

Disclosed are apparatuses and methods for fabricating the apparatuses. In one aspect, an apparatus includes a high-power die mounted on a backside of a package substrate. A heat transfer layer is disposed on the backside of the high-power die. A plurality of heat sink interconnects is coupled to the heat transfer layer, where each of the plurality of heat sink interconnects is directly coupled to the heat transfer layer in a vertical orientation.

Example embodiments relate to digital RF amplifiers. One example digital RF amplifier includes a driver having a plurality of outputs and being configured to individually set a signal level at the outputs either to an inactive or active level in response to a digital input signal. The RF amplifier also includes a transistor configured to output an analog RF signal at a transistor output. The transistor includes a plurality of transistor cells, each including a control terminal, an output terminal, and a common terminal. The transistor also includes a plurality of transistor inputs, each transistor input being electrically connected to the control terminal of at least one transistor cell. The transistor inputs are mutually electrically isolated. Each transistor input is connected to a different output of the driver. The transistor output is electrically connected to the output terminals of the plurality of transistor cells. The transistor is a circular transistor.

A portable communication device including a processor positioned in a first PCB, a communication circuit; and an antenna module. The antenna module includes a second PCB, an antenna array positioned in the second PCB, wherein the antenna array includes a plurality of antennas, a plurality of PAs, a plurality of LNAs, wherein the plurality of LNAs is greater than the plurality of PAs, a first transmission-reception circuit positioned in the second PCB, and a first reception circuit positioned in the second PCB.

A portable communication device including a processor positioned in a first PCB, a communication circuit; and an antenna module. The antenna module includes a second PCB, an antenna array positioned in the second PCB, wherein the antenna array includes a plurality of antennas, a plurality of PAs, a plurality of LNAs, wherein the plurality of LNAs is greater than the plurality of PAs, a first transmission-reception circuit positioned in the second PCB, and a first reception circuit positioned in the second PCB.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

A power amplifier device includes a substrate, a power transistor die, and one or more surface mount components. The substrate has substrate die contacts exposed at a first substrate surface, and additional substrate contacts exposed at a second substrate surface. The power transistor die includes an integrated transistor. The transistor includes a control terminal and a first current conducting terminal coupled, respectively, to first and second die contacts at the first die surface, and a second current conducting terminal coupled to a third die contact at a second die surface. The surface-mount components are connected to the additional substrate components, and the surface-mount components are electrically coupled through the substrate to the first and second die contacts. The power amplifier device also includes an encapsulation material layer covering the surface-mount components and the second substrate surface.

Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.