Metal pillars are placed adjacent to transistor arrays in the power amplifiers that can be used in wireless devices. By placing the metal pillars in intimate contact with the silicon substrate and not over a substantial portion of the transistor arrays, the heat generated by the transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar forms a solder bump of a flip chip power amplifier die, which when soldered to a module, further conducts the heat away from the transistor array.

A packaged module for use in a wireless communication device has a substrate supporting a crystal and a first die that includes at least a microprocessor and one or more of radio frequency transmitter circuitry and radio frequency receiver circuitry. The first die is disposed between the crystal and the substrate. An overmold encloses the first die and the crystal. The substrate also supports a second die that includes at least a power amplifier for amplifying a radio frequency input signal, where the second die is disposed on an opposite side of the substrate from the first die and the crystal.

A packaged module for use in a wireless communication device has a substrate supporting a crystal and a first die that includes at least a microprocessor and one or more of radio frequency transmitter circuitry and radio frequency receiver circuitry. The first die is disposed between the crystal and the substrate. An overmold encloses the first die and the crystal. The substrate also supports a second die that includes at least a power amplifier for amplifying a radio frequency input signal, where the second die is disposed on an opposite side of the substrate from the first die and the crystal.

Embodiments of the disclosure generally relate to a method and device for improving the efficiency of a power amplifier. The apparatus comprising: a harmonic generator, configured to generate one or more harmonic according to an output signal of a power amplifier; a harmonic feedback device, configured to inject the harmonic generated by the harmonic generator to an input terminal of the power amplifier; and a harmonic eliminator, configured to eliminate the harmonic in the output signal of the power amplifier. According to embodiments of the disclosure, the efficiency of power amplifier can be improved without degrading the linearity.

Embodiments of the disclosure generally relate to a method and device for improving the efficiency of a power amplifier. The apparatus comprising: a harmonic generator, configured to generate one or more harmonic according to an output signal of a power amplifier; a harmonic feedback device, configured to inject the harmonic generated by the harmonic generator to an input terminal of the power amplifier; and a harmonic eliminator, configured to eliminate the harmonic in the output signal of the power amplifier. According to embodiments of the disclosure, the efficiency of power amplifier can be improved without degrading the linearity.

A MMIC support and cooling structure having a three-dimensional, thermally conductive support structure having a plurality of surfaces and a circuit having a plurality of heat generating electrical components disposed on a first portion of the surfaces and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the thermally conductive support structure

A MMIC support and cooling structure having a three-dimensional, thermally conductive support structure having a plurality of surfaces and a circuit having a plurality of heat generating electrical components disposed on a first portion of the surfaces and interconnected by microwave transmission lines disposed on a second portion of the plurality of surfaces of the thermally conductive support structure

A receiver includes an amplification block supporting carrier aggregation (CA). The amplification block includes a first amplifier circuit configured to receive a radio frequency (RF) input signal at a block node from an outside source, amplify the RF input signal, and output the amplified RF input signal as a first RF output signal. The first amplifier circuit includes a first amplifier configured to receive the RF input signal through a first input node to amplify the RF input signal, and a first feedback circuit coupled between the first input node and a first internal amplification node of the first amplifier to provide feedback to the first amplifier.

A receiver includes an amplification block supporting carrier aggregation (CA). The amplification block includes a first amplifier circuit configured to receive a radio frequency (RF) input signal at a block node from an outside source, amplify the RF input signal, and output the amplified RF input signal as a first RF output signal. The first amplifier circuit includes a first amplifier configured to receive the RF input signal through a first input node to amplify the RF input signal, and a first feedback circuit coupled between the first input node and a first internal amplification node of the first amplifier to provide feedback to the first amplifier.

A semiconductor apparatus includes the following elements. A substrate includes a ground portion to which a ground potential is supplied. A semiconductor chip is mounted on the substrate and includes first and second output terminals, a first terminator, and a ground terminal. First and second amplifiers are respectively formed in first and second regions of the semiconductor chip and respectively amplify first and second input signals of first and second frequency bands and output first and second amplified signals from the first and second output terminals via first and second output wires. A first harmonic termination circuit includes a first wire which electrically connects the first terminator and the ground portion. A ground wire is disposed between the first wire and the second output wire in a plan view of a main surface of the semiconductor chip and electrically connects the ground terminal and the ground portion.