An apparatus for power amplifier control is provided, applied to a multi-stage power amplifier. The apparatus controls an input voltage of an amplification triode in the first amplification stage, by using a detected current change at a base of an amplification triode in the last amplification stage, achieving control of output power and a maximum output current of the multi-stage power amplifier, greatly reducing an influence of current detection on maximum output power and maximum output efficiency of the power amplifier.

A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.

A power amplifier module includes an output-stage amplifier, a driver-stage amplifier, an input switch, an output switch, an input matching circuit, an inter-stage matching circuit, an output matching circuit, and a control circuit. The input switch selectively connects one of a plurality of input signal paths to an input terminal of the driver-stage amplifier. The output switch selectively connects one of a plurality of output signal paths to an output terminal of the output-stage amplifier. The control circuit controls operations of the driver-stage amplifier and the output-stage amplifier. The input switch, the output switch, and the control circuit are integrated into an IC chip. The control circuit is disposed between the input switch and the output switch.

Aspects and examples described herein provide a radio-frequency switching circuit, switching device, and related methods. In one example, a radio-frequency switching device includes an input path configured to receive a radio-frequency signal, a plurality of output paths each configured to provide the radio-frequency signal, and a plurality of radio-frequency sub-networks each coupled to the input path and configured to direct the radio-frequency signal, each of the plurality of sub-networks including at least a first radio-frequency circuit having a first series of directly biased transistors, a second radio-frequency circuit having a second series of directly biased transistors, and a direct current blocking network interposed between the first radio-frequency circuit and the second radio-frequency circuit, each output path of the plurality corresponding to at least one of the plurality of radio-frequency sub-networks.

Aspects and examples described herein provide a radio-frequency switching circuit, switching device, and related methods. In one example, a radio-frequency switching device includes an input path configured to receive a radio-frequency signal, a plurality of output paths each configured to provide the radio-frequency signal, and a plurality of radio-frequency sub-networks each coupled to the input path and configured to direct the radio-frequency signal, each of the plurality of sub-networks including at least a first radio-frequency circuit having a first series of directly biased transistors, a second radio-frequency circuit having a second series of directly biased transistors, and a direct current blocking network interposed between the first radio-frequency circuit and the second radio-frequency circuit, each output path of the plurality corresponding to at least one of the plurality of radio-frequency sub-networks.

A semiconductor device that outputs a radio-frequency (RF) signal with high power is disclosed. The semiconductor device includes a housing, a semiconductor chip, an impedance converter, a capacitor, and a bonding wire. The housing includes a heat sink, an output lead terminal, and a bias terminal electrically isolated from the output lead terminal. The semiconductor chip is mounted on the heat sink of the housing. The impedance converter provides an input port, an output port, and an intermediate port between the input port and the output port thereof. The capacitor is mounted on the heat sink and between the impedance converter and the output lead terminal. The bonding wire connects the bias lead terminal with the intermediate port.

A semiconductor device that outputs a radio-frequency (RF) signal with high power is disclosed. The semiconductor device includes a housing, a semiconductor chip, an impedance converter, a capacitor, and a bonding wire. The housing includes a heat sink, an output lead terminal, and a bias terminal electrically isolated from the output lead terminal. The semiconductor chip is mounted on the heat sink of the housing. The impedance converter provides an input port, an output port, and an intermediate port between the input port and the output port thereof. The capacitor is mounted on the heat sink and between the impedance converter and the output lead terminal. The bonding wire connects the bias lead terminal with the intermediate port.

An amplifier may include control circuitry that may track a first input signal parameter and, in response, adjust a value of a second input parameter. Input parameter tracking and adjustment may facilitate control of output parameters for the amplifier. For example, an envelope-tracking amplifier may track input signal amplitude and adjust other input parameters in response. The adjustments may facilitate control of output parameters, such as gain or efficiency. The amplifier may further include calibration circuitry to determine adjustment responses to various tracked input parameters.

An amplifier may include control circuitry that may track a first input signal parameter and, in response, adjust a value of a second input parameter. Input parameter tracking and adjustment may facilitate control of output parameters for the amplifier. For example, an envelope-tracking amplifier may track input signal amplitude and adjust other input parameters in response. The adjustments may facilitate control of output parameters, such as gain or efficiency. The amplifier may further include calibration circuitry to determine adjustment responses to various tracked input parameters.

A power amplifier module includes a combining circuit including a combiner. The combining circuit further includes a first inductor connected in series between an output terminal of a first amplifier and the combiner, a second inductor connected in series between an output terminal of a second amplifier and the combiner, and a second capacitor having an end connected to the combiner and another end grounded. A phase of a third signal from the output terminal of the first amplifier to the second amplifier through the combiner is delayed by about 45 degrees in the first inductor and the second capacitor, and is delayed by about 45 degrees in the second inductor and the second capacitor. A phase of the third signal from the output terminal of the first amplifier to the second amplifier through the first capacitor is advanced by about 90 degrees.