Examples disclosed herein relate to a high gain active relay antenna system. The active relay antenna system comprises a first antenna pair having a first receive antenna and a first transmit antenna to communicate wireless signals in a forward link from a base station to a plurality of users; and a second antenna pair having a second receive antenna and a second transmit antenna to communicate wireless signals in a return link from the plurality of users to the base station. The active relay antenna system further comprises a first active relay section and a second active relay section to provide for adjustable power gain in the wireless signals.

Examples disclosed herein relate to a high gain active relay antenna system. The active relay antenna system comprises a first antenna pair having a first receive antenna and a first transmit antenna to communicate wireless signals in a forward link from a base station to a plurality of users; and a second antenna pair having a second receive antenna and a second transmit antenna to communicate wireless signals in a return link from the plurality of users to the base station. The active relay antenna system further comprises a first active relay section and a second active relay section to provide for adjustable power gain in the wireless signals.

Power amplifier assemblies and components are disclosed. According to some embodiments, a power amplifier assembly (10) is provided that includes a power amplifier (12) having a gate lead (14) with a gate contact surface, a drain lead (13) with a drain contact surface and a source contact surface (15) having a length and width. An extended heat slug (11) is mounted against the source contact surface to conduct heat away (18) from the surface and to extend the electrical path of the source. The extended heat slug has at least a length that is greater than the length of the source contact surface.

Power amplifier assemblies and components are disclosed. According to some embodiments, a power amplifier assembly (10) is provided that includes a power amplifier (12) having a gate lead (14) with a gate contact surface, a drain lead (13) with a drain contact surface and a source contact surface (15) having a length and width. An extended heat slug (11) is mounted against the source contact surface to conduct heat away (18) from the surface and to extend the electrical path of the source. The extended heat slug has at least a length that is greater than the length of the source contact surface.

Monolithic attenuator, limiter, and linearizer circuitry to be integrated with other circuitry on a chip are provided. According to one aspect, a monolithic attenuator and limiter circuit comprises an input terminal, an output terminal, a first resistor having a first terminal coupled to the input terminal and a second terminal coupled to the output terminal, and a second resistor having a first terminal coupled to the first or second terminal of the first resistor and a second terminal coupled to ground. At least the first resistor is a non-linear resistor whose resistance changes as a function of the voltage across the resistor. The monolithic attenuator and limiter circuit may be part of a “Pi” or “Tee” topology. According to another aspect, a non-linear shunt resistor coupled to the input of an amplifier circuit can operate to linearize the gain of the amplifier circuit over a range of input levels.

Monolithic attenuator, limiter, and linearizer circuitry to be integrated with other circuitry on a chip are provided. According to one aspect, a monolithic attenuator and limiter circuit comprises an input terminal, an output terminal, a first resistor having a first terminal coupled to the input terminal and a second terminal coupled to the output terminal, and a second resistor having a first terminal coupled to the first or second terminal of the first resistor and a second terminal coupled to ground. At least the first resistor is a non-linear resistor whose resistance changes as a function of the voltage across the resistor. The monolithic attenuator and limiter circuit may be part of a “Pi” or “Tee” topology. According to another aspect, a non-linear shunt resistor coupled to the input of an amplifier circuit can operate to linearize the gain of the amplifier circuit over a range of input levels.

Methods of according to the present disclosure can include: providing a substrate including: a first semiconductor region, a second semiconductor region, and a trench isolation (TI) laterally between the first and second semiconductor regions; forming a seed layer on the TI and the second semiconductor region of the substrate, leaving the first semiconductor region of the substrate exposed; forming an epitaxial layer on the substrate and the seed layer, wherein the epitaxial layer includes: a first semiconductor base material positioned above the first semiconductor region of the substrate, and an extrinsic base region positioned above the seed layer; forming an opening within the extrinsic base material and the seed layer to expose an upper surface of the second semiconductor region; and forming a second semiconductor base material in the opening.

Methods of according to the present disclosure can include: providing a substrate including: a first semiconductor region, a second semiconductor region, and a trench isolation (TI) laterally between the first and second semiconductor regions; forming a seed layer on the TI and the second semiconductor region of the substrate, leaving the first semiconductor region of the substrate exposed; forming an epitaxial layer on the substrate and the seed layer, wherein the epitaxial layer includes: a first semiconductor base material positioned above the first semiconductor region of the substrate, and an extrinsic base region positioned above the seed layer; forming an opening within the extrinsic base material and the seed layer to expose an upper surface of the second semiconductor region; and forming a second semiconductor base material in the opening.

The present disclosure relates to semiconductor structures and, more particularly, to a differential circuit with automatic parasitic neutralization and gain boost and methods of manufacture. The structure includes a plurality of auxiliary circuit devices with back-gate controls to perform a boost gain, and a differential pair of circuit devices which are connected to the auxiliary circuit devices.

The present disclosure relates to semiconductor structures and, more particularly, to a differential circuit with automatic parasitic neutralization and gain boost and methods of manufacture. The structure includes a plurality of auxiliary circuit devices with back-gate controls to perform a boost gain, and a differential pair of circuit devices which are connected to the auxiliary circuit devices.