An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.

An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity. An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device.

A power amplifier includes a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency, an input transmission line circuit coupled to a gate terminal of the transistor, and an output transmission line circuit coupled to a drain terminal of the transistor. The input transmission line includes an inductor-capacitor (LC) circuit that resonates at a first resonant frequency equaled to or higher than the higher operating frequency. The output transmission line includes an inductor-capacitor-inductor (LCL) circuit and a capacitor-inductor-capacitor (CLC) circuit. The LCL circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency. The CLC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency.

A power amplifier includes a transistor operating in a range of frequencies from a lower operating frequency to a higher operating frequency to provide a relatively linear gain between the lower operating frequency and the higher operating frequency, an input transmission line circuit coupled to a gate terminal of the transistor, and an output transmission line circuit coupled to a drain terminal of the transistor. The input transmission line includes an inductor-capacitor (LC) circuit that resonates at a first resonant frequency equaled to or higher than the higher operating frequency. The output transmission line includes an inductor-capacitor-inductor (LCL) circuit and a capacitor-inductor-capacitor (CLC) circuit. The LCL circuit resonates at a second resonant frequency equaled to or lower than the lower operating frequency. The CLC circuit resonates at a third resonant frequency equaled to or higher than the higher operating frequency.

The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

A wireless access point is configured to regularly monitor the status of WLAN, WAN and ePDG data links to determine whether the current connections are sufficient to support VoWiFI services. When a device connects to the WLAN of the hub and attempts to switch from its VoLTE service to VoWiFi via the hub, the hub is configured to determine whether the current conditions can satisfy a VoWiFi connection. If the VoWiFi service can support the connection, the request is routed to the ePDG associated with the mobile device's subscriber LTE network. However, if the current conditions cannot satisfactorily support a VoWiFi connection such that incoming calls may be missed or the quality of active calls would not be clear, then the hub is configured to block the request so that the client device will time out and remain connected to VoLTE.

A packaged module for use in a wireless communication device has a substrate supporting an integrated circuit die that includes at least a microprocessor and radio frequency receiver circuitry and a stacked filter assembly configured as a filter circuit that is in communication with the radio frequency receiver circuitry. The stacked filter assembly includes a plurality of passive components, where each passive component is packaged as a surface mount device. At least one passive component is in direct communication with the substrate and at least another passive component is supported above the substrate by the at least one passive component that is in the direct communication with the substrate.

A packaged module for use in a wireless communication device has a substrate supporting an integrated circuit die that includes at least a microprocessor and radio frequency receiver circuitry and a stacked filter assembly configured as a filter circuit that is in communication with the radio frequency receiver circuitry. The stacked filter assembly includes a plurality of passive components, where each passive component is packaged as a surface mount device. At least one passive component is in direct communication with the substrate and at least another passive component is supported above the substrate by the at least one passive component that is in the direct communication with the substrate.

A packaged module for use in a wireless communication device has a substrate supporting a crystal assembly and a first die that implements at least a portion of a radio frequency baseband subsystem. The crystal assembly, positioned between the first die and the substrate, includes a crystal, an input terminal configured to receive a first signal, an output terminal configured to output a second signal, a conductive pillar, and an enclosure configured to enclose the crystal, where the conductive pillar is formed at least partially within a side of the enclosure and extends from a top surface to a bottom surface of the enclosure. The conductive pillar conducts a third signal distinct from the first and second signals.