The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.

An isolated power transfer device has a primary side and a secondary side isolated from the primary side by an isolation barrier. A secondary-side circuit includes a rectifier circuit coupled to a secondary-side conductive coil. The secondary-side circuit includes a first resistor coupled to a first power supply node and a terminal node. The secondary-side circuit includes a second resistor coupled to the terminal node and a second power supply node. The secondary-side circuit includes a first circuit to generate a feedback signal in response to a reference voltage and a signal on the terminal node. The feedback signal has a hysteretic band defined by the first resistor and the second resistor. The secondary-side circuit is configured as an AC/DC power converter that provides, on the first power supply node, an output DC signal having a voltage level based on a ratio of the first resistor to the second resistor.

An isolated power transfer device has a primary side and a secondary side isolated from the primary side by an isolation barrier. A secondary-side circuit includes a rectifier circuit coupled to a secondary-side conductive coil. The secondary-side circuit includes a first resistor coupled to a first power supply node and a terminal node. The secondary-side circuit includes a second resistor coupled to the terminal node and a second power supply node. The secondary-side circuit includes a first circuit to generate a feedback signal in response to a reference voltage and a signal on the terminal node. The feedback signal has a hysteretic band defined by the first resistor and the second resistor. The secondary-side circuit is configured as an AC/DC power converter that provides, on the first power supply node, an output DC signal having a voltage level based on a ratio of the first resistor to the second resistor.

Radio frequency (RF) filters configured to filter undesired signal components (e.g., noise and harmonics) from RF signals are disclosed. In one embodiment, an RF filter includes a first inductor coil having a first winding and a second inductor coil having a second winding and a third winding. The second winding of the second inductor coil is configured to have a first mutual magnetic coupling with the first winding, while the third winding of the second inductor coil is configured to have a second mutual magnetic coupling with the first winding. The second winding is connected to the third winding such that the first mutual magnetic coupling and the second mutual magnetic coupling are in opposition. In this manner, the first inductor coil and the second inductor coil may be provided in a compact arrangement while providing weak mutual magnetic coupling between the first inductor coil and the second inductor coil.

Radio frequency (RF) filters configured to filter undesired signal components (e.g., noise and harmonics) from RF signals are disclosed. In one embodiment, an RF filter includes a first inductor coil having a first winding and a second inductor coil having a second winding and a third winding. The second winding of the second inductor coil is configured to have a first mutual magnetic coupling with the first winding, while the third winding of the second inductor coil is configured to have a second mutual magnetic coupling with the first winding. The second winding is connected to the third winding such that the first mutual magnetic coupling and the second mutual magnetic coupling are in opposition. In this manner, the first inductor coil and the second inductor coil may be provided in a compact arrangement while providing weak mutual magnetic coupling between the first inductor coil and the second inductor coil.

A differential amplifier comprises a first differential circuitry structure including a first part comprising at least one branch of transistors and a second part comprising at least one branch of transistors, and a second circuitry structure. The second circuitry structure has a first non-linear device and a second non-linear device. The non-linear devices each comprise a transistor having a control node connected to a differential output terminals of the differential amplifier. A common center node of the non-linear devices is connected to a control node of one of the transistors of each branch of the first part having a differential output terminal. Amplifier applications, communication devices and network nodes are also disclosed.

A differential amplifier comprises a first differential circuitry structure including a first part comprising at least one branch of transistors and a second part comprising at least one branch of transistors, and a second circuitry structure. The second circuitry structure has a first non-linear device and a second non-linear device. The non-linear devices each comprise a transistor having a control node connected to a differential output terminals of the differential amplifier. A common center node of the non-linear devices is connected to a control node of one of the transistors of each branch of the first part having a differential output terminal. Amplifier applications, communication devices and network nodes are also disclosed.

Systems and methods for improving output stability of an RFPA. The systems may obtain an initial radio frequency signal to be amplified by the RFPA. The systems may also generate a compensated radio frequency signal by performing, based on a preset compensation rule and a set of compensation parameters, a gain compensation operation for the initial radio frequency signal. The set of compensation parameters may include a supply voltage of the RFPA and a transistor junction temperature of the RFPA. The systems may further generate, by performing a non-linear correction operation on the compensated radio frequency signal, a corrected radio frequency signal, which is transmitted to the RFPA.

A class-D amplifier includes an output driver, a pulse width modulator, an integrator, and duty cycle control circuitry. The output driver is configured to drive a loudspeaker. The pulse width modulator is coupled to the output driver. The integrator is coupled to the pulse width modulator. The duty cycle control circuitry is coupled to the integrator. The duty cycle control circuitry is configured to monitor amplitude of output signal of the integrator, and change an average duty cycle of signal at an output of the output driver as a function of the amplitude.

A class-D amplifier includes an output driver, a pulse width modulator, an integrator, and duty cycle control circuitry. The output driver is configured to drive a loudspeaker. The pulse width modulator is coupled to the output driver. The integrator is coupled to the pulse width modulator. The duty cycle control circuitry is coupled to the integrator. The duty cycle control circuitry is configured to monitor amplitude of output signal of the integrator, and change an average duty cycle of signal at an output of the output driver as a function of the amplitude.