An uplink multiple input-multiple output (MIMO) transmitter apparatus includes a transmitter chain that includes a sigma-delta circuit that creates a summed (sigma) signal and a difference (delta) signal from two original signals to be transmitted. These new sigma and delta signals are amplified by power amplifiers to a desired output level before having two signals reconstructed from the amplified sigma and amplified delta signals by a second circuit. These reconstructed signals match the two original signals in content but are at a desired amplified level relative to the two original signals. The reconstructed signals are then transmitted through respective antennas as uplink signals. By employing this uplink MIMO transmitter apparatus, it is possible to use smaller power amplifiers, which may reduce footprint, power consumption, and costs of the uplink MIMO transmitter apparatus.

An uplink multiple input-multiple output (MIMO) transmitter apparatus includes a transmitter chain that includes a sigma-delta circuit that creates a summed (sigma) signal and a difference (delta) signal from two original signals to be transmitted. These new sigma and delta signals are amplified by power amplifiers to a desired output level before having two signals reconstructed from the amplified sigma and amplified delta signals by a second circuit. These reconstructed signals match the two original signals in content but are at a desired amplified level relative to the two original signals. The reconstructed signals are then transmitted through respective antennas as uplink signals. By employing this uplink MIMO transmitter apparatus, it is possible to use smaller power amplifiers, which may reduce footprint, power consumption, and costs of the uplink MIMO transmitter apparatus.

A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.

A semiconductor device includes a semiconductor substrate and first and second bipolar transistors. The semiconductor substrate includes first and second main surfaces opposing each other. The first bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a first emitter layer. The second bipolar transistor is formed on the first main surface of the semiconductor substrate and includes a second emitter layer and a resistor layer. The resistor layer is stacked on the second emitter layer in a direction normal to the first main surface.

A semiconductor device and a communication circuit capable of reducing the effect of a noise generated in an inductor are provided. A semiconductor device according to an embodiment includes a substrate, a first circuit disposed in a first area of the substrate, a second circuit disposed in a second area of the substrate, the second circuit being configured to operate selectively with the first circuit, a first inductor disposed in the second area and connected to the first circuit, and a second inductor disposed in the first area and connected to the second circuit.

A semiconductor device and a communication circuit capable of reducing the effect of a noise generated in an inductor are provided. A semiconductor device according to an embodiment includes a substrate, a first circuit disposed in a first area of the substrate, a second circuit disposed in a second area of the substrate, the second circuit being configured to operate selectively with the first circuit, a first inductor disposed in the second area and connected to the first circuit, and a second inductor disposed in the first area and connected to the second circuit.

A technique for determining a time alignment (TA) error in a circuitry is provided. One or few measurement cycles can be utilized for a closed-loop TA alignment, e.g., for envelope tracking in a transmitter. As to a method aspect of the technique, the amplitudes of a first signal and a second signal are determined. A first measure is computed that is indicative of a relative amplitude error, and a second measure is computed that is indicative of a variation of at least one of the amplitudes. The TA error is determined by correlating the first and second measures.

A technique for determining a time alignment (TA) error in a circuitry is provided. One or few measurement cycles can be utilized for a closed-loop TA alignment, e.g., for envelope tracking in a transmitter. As to a method aspect of the technique, the amplitudes of a first signal and a second signal are determined. A first measure is computed that is indicative of a relative amplitude error, and a second measure is computed that is indicative of a variation of at least one of the amplitudes. The TA error is determined by correlating the first and second measures.

A transmitter/receiver apparatus including: a transmitter/receiver terminal; a switching amplifier that includes a low-side switching element connected between a ground terminal and a pulse output terminal and a high-side switching element connected between the pulse output terminal and a power supply terminal and that outputs a pulse signal from the pulse output terminal; a filter that passes therethrough and outputs as a transmitted signal a predetermined frequency component of the pulse signal from a transmitter terminal; and a transmit/receive switch unit that switches the connection status between the transmitter/receiver terminal and the transmitter terminal and also switches the connection status between the transmitter/receiver terminal and a receiver terminal. During receiving, on the basis of the connection status between the transmitter/receiver terminal and the transmitter terminal, the low-side and high-side switching elements are fixed to conductive and non-conductive states, respectively, to non-conductive and conductive states, respectively, or both to non-conductive states.

A transmitter/receiver apparatus including: a transmitter/receiver terminal; a switching amplifier that includes a low-side switching element connected between a ground terminal and a pulse output terminal and a high-side switching element connected between the pulse output terminal and a power supply terminal and that outputs a pulse signal from the pulse output terminal; a filter that passes therethrough and outputs as a transmitted signal a predetermined frequency component of the pulse signal from a transmitter terminal; and a transmit/receive switch unit that switches the connection status between the transmitter/receiver terminal and the transmitter terminal and also switches the connection status between the transmitter/receiver terminal and a receiver terminal. During receiving, on the basis of the connection status between the transmitter/receiver terminal and the transmitter terminal, the low-side and high-side switching elements are fixed to conductive and non-conductive states, respectively, to non-conductive and conductive states, respectively, or both to non-conductive states.