One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 310.sup.16 cm.sup.3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Embodiments of radio frequency (RF) systems include a transmit/receive switch integrated with one or more power amplifiers and/or other components. The power amplifiers can have transformer-based architectures, and a power amplifier and switch can be integrated onto a single complementary metal oxide semiconductor die.

Certain aspects of the present disclosure provide methods and apparatus for amplifying signals with an amplification circuit. The amplification circuit generally includes a first transistor, an input path coupled between an input node of the amplification circuit and a control input of the first transistor, and a feedforward path coupled between the input node and a feedforward node. In certain aspects, the amplification circuit may also include a first resistive device coupled between the feedforward node and the control input of the first transistor, a biasing circuit coupled to the feedforward node, and a low-impedance path coupled to the feedforward node.

Certain aspects of the present disclosure provide methods and apparatus for amplifying signals with an amplification circuit. The amplification circuit generally includes a first transistor, an input path coupled between an input node of the amplification circuit and a control input of the first transistor, and a feedforward path coupled between the input node and a feedforward node. In certain aspects, the amplification circuit may also include a first resistive device coupled between the feedforward node and the control input of the first transistor, a biasing circuit coupled to the feedforward node, and a low-impedance path coupled to the feedforward node.

A class-D amplifier includes an output driver, a pulse width modulator, an integrator, and duty cycle control circuitry. The output driver is configured to drive a loudspeaker. The pulse width modulator is coupled to the output driver. The integrator is coupled to the pulse width modulator. The duty cycle control circuitry is coupled to the integrator. The duty cycle control circuitry is configured to monitor amplitude of output signal of the integrator, and change an average duty cycle of signal at an output of the output driver as a function of the amplitude.

A class-D amplifier includes an output driver, a pulse width modulator, an integrator, and duty cycle control circuitry. The output driver is configured to drive a loudspeaker. The pulse width modulator is coupled to the output driver. The integrator is coupled to the pulse width modulator. The duty cycle control circuitry is coupled to the integrator. The duty cycle control circuitry is configured to monitor amplitude of output signal of the integrator, and change an average duty cycle of signal at an output of the output driver as a function of the amplitude.

This application provides a control circuit, a control method, and an electronic device the control circuit comprising: a first control sub-circuit configured to receive a first power supply signal from a first power supply sub-circuit in an electronic device that includes the control circuit and output a first control signal; a second control sub-circuit configured to receive a second power supply signal from a second power supply sub-circuit in the electronic device and output a second control signal under control of the first control signal, wherein the second control signal is used to control a functional sub-circuit in the electronic device to be disabled during power-on and power-off process of the electronic device.