Certain aspects of the present disclosure provide methods and apparatus for amplifying signals with an amplification circuit. The amplification circuit generally includes a first transistor, an input path coupled between an input node of the amplification circuit and a control input of the first transistor, and a feedforward path coupled between the input node and a feedforward node. In certain aspects, the amplification circuit may also include a first resistive device coupled between the feedforward node and the control input of the first transistor, a biasing circuit coupled to the feedforward node, and a low-impedance path coupled to the feedforward node.

Metal pillars are placed adjacent to transistor arrays in the power amplifiers that can be used in wireless devices. By placing the metal pillars in intimate contact with the silicon substrate and not over a substantial portion of the transistor arrays, the heat generated by the transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar forms a solder bump of a flip chip power amplifier die, which when soldered to a module, further conducts the heat away from the transistor array.

Metal pillars are placed adjacent to transistor arrays in the power amplifiers that can be used in wireless devices. By placing the metal pillars in intimate contact with the silicon substrate and not over a substantial portion of the transistor arrays, the heat generated by the transistor arrays flows down into the silicon substrate and out the metal pillar. The metal pillar forms a solder bump of a flip chip power amplifier die, which when soldered to a module, further conducts the heat away from the transistor array.

A monolithic microwave integrated circuit (MIMIC) for a phased array antenna system, and a phased array antenna system including the MIMIC are provided. The MIMIC includes a first amplifier including a first input terminal and a first output terminal, a second amplifier including a second input terminal and a second output terminal, a first switch connectable to the first input terminal and the second output terminal, and a second switch connectable to the first output terminal and the second input terminal.

A monolithic microwave integrated circuit (MIMIC) for a phased array antenna system, and a phased array antenna system including the MIMIC are provided. The MIMIC includes a first amplifier including a first input terminal and a first output terminal, a second amplifier including a second input terminal and a second output terminal, a first switch connectable to the first input terminal and the second output terminal, and a second switch connectable to the first output terminal and the second input terminal.

A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

A system may include a radio frequency (RF) amplifier device that includes an input impedance matching network and first and second baseband decoupling circuits, which may remove intermodulation distortion products from signal energy input to the RF amplifier device at baseband frequencies. The input impedance matching network may act as a band-pass or low-pass filter. A gate bias voltage may be applied to the gate of a transistor in the RF amplifier device through one of the baseband decoupling circuits or, alternatively, at an input node of the RF amplifier device.

A system may include a radio frequency (RF) amplifier device that includes an input impedance matching network and first and second baseband decoupling circuits, which may remove intermodulation distortion products from signal energy input to the RF amplifier device at baseband frequencies. The input impedance matching network may act as a band-pass or low-pass filter. A gate bias voltage may be applied to the gate of a transistor in the RF amplifier device through one of the baseband decoupling circuits or, alternatively, at an input node of the RF amplifier device.

Use of a closed loop APC may involve a problem of cost and power consumption due to increased circuit scale. The semiconductor device includes a power amplifier that amplifies an output from a transmission circuit and a regulator that supplies power to the power amplifier. The regulator includes an operational amplifier comprising a loop gain control circuit and a loop gain control voltage generation circuit that supplies control voltage to the loop gain control circuit. The loop gain control voltage generation circuit minimizes a loop gain of the operational amplifier when starting up the regulator.