The present disclosure relates to systems and methods for operating transceiver circuitry to transmit or receive signals on various frequency ranges. To do so, a transmitter or a receiver of the transceiver circuitry is selectively coupled to or uncoupled from an antenna of the transceiver circuitry. Additionally, radio frequency filters may be individually or collectively coupled to and/or uncoupled from the antenna to filter different frequencies in the transmitting or receiving signals.

The present disclosure relates to systems and methods for operating transceiver circuitry to transmit or receive signals on various frequency ranges. To do so, a transmitter or a receiver of the transceiver circuitry is selectively coupled to or uncoupled from an antenna of the transceiver circuitry. Additionally, radio frequency filters may be individually or collectively coupled to and/or uncoupled from the antenna to filter different frequencies in the transmitting or receiving signals.

A sensor assembly including a capacitive sensor, like a microelectromechanical (MEMS) microphone, and an electrical circuit therefor are disclosed. The electrical circuit includes a first transistor having an input gate connectable to the capacitive sensor, a second transistor having an input gate coupled to an output of the first transistor, a feedforward circuit interconnecting a back-gate of the second transistor and the output of the first transistor, and a filter circuit interconnecting the output of the first transistor and the input gate of the second transistor.

A power amplifier system which operates at a narrow band with high power and high efficiency or at a wide band is provided. Said power amplifier system comprises at least one high power amplifier; at least one connection line; at least one input block which receives at least one signal from an input, which is connected to said high power amplifier and connection line, which sends received signal to either high power amplifier or connection line and which amplifies the power of the signal sent to the connection line; and at least one high power asymmetric output switch, which is connected to said high power amplifier and connection line and which sends signals coming from said high power amplifier and connection line to an output.

A Doherty amplifier system is disclosed with a carrier amplifier configured to amplify a first portion of a radio frequency (RF) signal. A peaking amplifier with a peaking output is configured to amplify a second portion of the RF signal when it is above a power level threshold. A first inductor is coupled between the main output and a first middle node, and a second inductor is coupled between the first middle node and the peaking output. The first inductor and the second inductor are configured to have a first magnetic coupling to form a first impedance inverter. A third inductor is coupled between the peaking output and a second middle node, and a fourth inductor is coupled between the second middle node and an RF signal output. The third inductor and the fourth inductor are configured to have a second magnetic coupling to form a second impedance inverter.

A Doherty amplifier system is disclosed with a carrier amplifier configured to amplify a first portion of a radio frequency (RF) signal. A peaking amplifier with a peaking output is configured to amplify a second portion of the RF signal when it is above a power level threshold. A first inductor is coupled between the main output and a first middle node, and a second inductor is coupled between the first middle node and the peaking output. The first inductor and the second inductor are configured to have a first magnetic coupling to form a first impedance inverter. A third inductor is coupled between the peaking output and a second middle node, and a fourth inductor is coupled between the second middle node and an RF signal output. The third inductor and the fourth inductor are configured to have a second magnetic coupling to form a second impedance inverter.

A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

Power amplifier devices and methods for fabricating power amplifier devices containing frontside heat extraction structures are disclosed. In embodiments, the power amplifier device includes a substrate, a radio frequency (RF) power die bonded to a die support surface of the substrate, and a frontside heat extraction structure further attached to the die support surface. The frontside heat extraction structure includes, in turn, a transistor-overlay portion in direct thermal contact with a frontside of the RF power die, a first heatsink coupling portion thermally coupled to a heatsink region of the substrate, and a primary heat extraction path extending from the transistor-overlay portion to the first heatsink coupling portion. The primary heat extraction path promotes conductive heat transfer from the RF power die to the heatsink region and reduce local temperatures within a transistor channel of the RF power die during operation of the power amplifier device.

Power amplifier devices and methods for fabricating power amplifier devices containing frontside heat extraction structures are disclosed. In embodiments, the power amplifier device includes a substrate, a radio frequency (RF) power die bonded to a die support surface of the substrate, and a frontside heat extraction structure further attached to the die support surface. The frontside heat extraction structure includes, in turn, a transistor-overlay portion in direct thermal contact with a frontside of the RF power die, a first heatsink coupling portion thermally coupled to a heatsink region of the substrate, and a primary heat extraction path extending from the transistor-overlay portion to the first heatsink coupling portion. The primary heat extraction path promotes conductive heat transfer from the RF power die to the heatsink region and reduce local temperatures within a transistor channel of the RF power die during operation of the power amplifier device.