An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a first RF signal input terminal, a first RF signal output terminal, and a transistor. The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

Described examples provide for digital communication circuits and systems that implement digital pre-distortion (DPD). In an example, a system includes a DPD circuit configured to compensate an input signal for distortions resulting from an amplifier. The DPD circuit includes an infinite impulse response (IIR) filter configured to implement a transfer function. The IIR filter includes a selection circuit configured to selectively output a selected parameter. The transfer function is based on the selected parameter.

This invention provides compact Power Amplifiers with improved efficiency of the circuitry and improved heat dissipation, together achieved much smaller enclosure size for use in modern installations requiring reduced height such as between the thin flat TV and wall, under the table or on the projector pole or in ceiling box and the like.

Example embodiments relate to RF amplifier packages. One example RF amplifier package includes an input terminal, an output terminal, a substrate, a first DC blocking capacitor having a first terminal and a grounded second terminal, and a second conductor die mounted on the substrate. The semiconductor die includes a semiconductor substrate, an RE power field-effect transistor (FET) integrated on the semiconductor substrate, a gate bondbar, a first drain bondbar, a second drain bondbar, and a plurality of first bondwires connecting the second drain bondbar to the first terminal of the first DC blocking capacitor. The RF power FET includes a plurality of gate fingers that are electrically connected to the gate bondbar and that each extend from the gate bondbar towards the first drain bondbar and underneath the second drain bondbar, a first set of drain fingers, and a second set of drain fingers.

In an embodiment, a method for shaping a PWM signal includes: receiving an input PWM signal; generating an output PWM signal based on the input PWM signal by: when the input PWM signal transitions with a first edge of the input PWM signal, transitioning the output PWM signal with a first edge of the output PWM signal; and when the input PWM signal transitions with a second edge before the first edge of the output PWM signal transitions, delaying a second edge of the output PWM signal based on the first edge of the output PWM signal.

Methods related to amplification of radio-frequency signals. In some embodiments, a method for amplifying a radio-frequency signal can include configuring a gain stage to be in a selected one of a plurality of gain settings, with at least some of the gain settings resulting in different phases for the radio-frequency signal. The method can further include adjusting the phase of the radio-frequency signal for the selected gain setting, such that the adjusted phase is part of desired phases adjusted from the different phases.

Methods related to amplification of radio-frequency signals. In some embodiments, a method for amplifying a radio-frequency signal can include configuring a gain stage to be in a selected one of a plurality of gain settings, with at least some of the gain settings resulting in different phases for the radio-frequency signal. The method can further include adjusting the phase of the radio-frequency signal for the selected gain setting, such that the adjusted phase is part of desired phases adjusted from the different phases.

Examples disclosed herein relate to a vector modulator architecture, having an input splitter network configured to receive a radio frequency (RF) input signal and generate a plurality of quadrature signals at different phases, a variable gain amplifier (VGA) stage coupled to the input splitter network and configured to apply a first gain to one or more of the plurality of quadrature signals, a power combiner coupled to the VGA stage and configured to combine the plurality of quadrature signals into a combined RF signal, and a power amplifier (PA) stage coupled to the power combiner and configured to apply a second gain to the combined RF signal and generate an output RF signal. Other examples disclosed herein relate to an antenna system for autonomous vehicles and a radar system for use in an autonomous driving vehicle.

Examples disclosed herein relate to a vector modulator architecture, having an input splitter network configured to receive a radio frequency (RF) input signal and generate a plurality of quadrature signals at different phases, a variable gain amplifier (VGA) stage coupled to the input splitter network and configured to apply a first gain to one or more of the plurality of quadrature signals, a power combiner coupled to the VGA stage and configured to combine the plurality of quadrature signals into a combined RF signal, and a power amplifier (PA) stage coupled to the power combiner and configured to apply a second gain to the combined RF signal and generate an output RF signal. Other examples disclosed herein relate to an antenna system for autonomous vehicles and a radar system for use in an autonomous driving vehicle.

Disclosed is an electronic device including an antenna module comprising a plurality of radio frequency (RF) chains, and a processor configured to control the antenna module, wherein each of the RF chains comprises an amplifier that amplifies power and a power detector, and wherein the antenna module further comprises a switching circuit that selectively switches between a first path and a second path, the first path being a connection through which an RF signal converted in the antenna module is transmitted to the power detector causing the RF signal to be detected, and the second path being a connection through which the RF signal is transmitted to the amplifier causing the power detector to detect an RF signal of the amplifier.