Apparatus and methods for power amplifier systems with balun and shunt capacitor are disclosed. In certain embodiments, a front-end system includes a shunt capacitor, a balun having an input side and an output side, and power amplifier stages that operate in parallel with one another to amplify a radio frequency input signal. The power amplifier stages include a first power amplifier stage having a first output coupled to the shunt capacitor and to a first input terminal on the input side of the balun, and a second power amplifier stage having a second output coupled to a second input terminal on the input side of the balun.

A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure comprising a barrier layer on a channel layer, first and second source/drain regions in the semiconductor layer structure, first and second source/drain contacts on the respective first and second source/drain regions, and a longitudinally-extending gate finger that is between the first and second source/drain contacts. The first and second source/drain contacts each has an inner sidewall that faces the gate finger and an opposed outer sidewall. The first source/drain region extends a first distance from a lower edge of the inner sidewall of the first source/drain contact towards the second source/drain region along a transverse axis that extends parallel to a plane defined by the upper surface of the semiconductor layer structure, and extends a second, smaller distance from a lower edge of the outer sidewall of the first source/drain contact away from the second source/drain region.

A gallium nitride-based RF transistor amplifier comprises a semiconductor layer structure comprising a barrier layer on a channel layer, first and second source/drain regions in the semiconductor layer structure, first and second source/drain contacts on the respective first and second source/drain regions, and a longitudinally-extending gate finger that is between the first and second source/drain contacts. The first and second source/drain contacts each has an inner sidewall that faces the gate finger and an opposed outer sidewall. The first source/drain region extends a first distance from a lower edge of the inner sidewall of the first source/drain contact towards the second source/drain region along a transverse axis that extends parallel to a plane defined by the upper surface of the semiconductor layer structure, and extends a second, smaller distance from a lower edge of the outer sidewall of the first source/drain contact away from the second source/drain region.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

A circuit including an amplifier having an input and an output. The circuit also includes a current-to-voltage amplifier having an input. The circuit further includes a current mirror coupled between the output of the amplifier and the input of the current-to-voltage amplifier. The current mirror is configured to chop current flowing through the first current mirror.

A variable-gain power amplifying technique includes generating, with a network of one or more reactive components included in an oscillator, a first oscillating signal, and outputting, via one or more taps included in the network of the reactive components, a second oscillating signal. The second oscillating signal has a magnitude that is proportional to and less than the first oscillating signal. The power amplifying technique further includes selecting one of the first and second oscillating signals to use for generating a power-amplified output signal, and amplifying the selected one of the first and second oscillating signals to generate the power-amplified output signal.

A variable-gain power amplifying technique includes generating, with a network of one or more reactive components included in an oscillator, a first oscillating signal, and outputting, via one or more taps included in the network of the reactive components, a second oscillating signal. The second oscillating signal has a magnitude that is proportional to and less than the first oscillating signal. The power amplifying technique further includes selecting one of the first and second oscillating signals to use for generating a power-amplified output signal, and amplifying the selected one of the first and second oscillating signals to generate the power-amplified output signal.

An apparatus is disclosed for frequency-based predistortion signal generation. In an example aspect, the apparatus includes a predistortion linearizer circuit configured to be coupled to an input of an amplifier. The amplifier has non-linearities associated with multiple frequencies. The multiple frequencies include a first subset of frequencies and a second subset of frequencies. The predistortion linearizer circuit is also configured to accept an input signal. The predistortion linearizer circuit is additionally configured to generate, based on the input signal, a compensation signal to attenuate the non-linearities existing within the first subset of frequencies more than the non-linearities existing within the second subset of frequencies. The predistortion linearizer circuit is further configured to generate a pre-distorted signal based on the input signal and the compensation signal.

A method for converting voltage is disclosed, including implementing a first DC-DC converter in a power management unit; implementing a second DC-DC converter in the power management unit; implementing a controller communicatively coupled to a first output line of the first DC-DC converter and communicatively coupled to a second output line of the second DC-DC converter; coupling the power management unit to a supply voltage; and providing one or more output voltages on the first output line and the second output line.