A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

In a semiconductor device including gate fingers each having a linear shape extending from a feed line, and arranged in areas between drain electrodes and source electrodes, open stubs are connected directly to the feed line.

A semiconductor device includes two cell rows, each of which is formed of a plurality of transistor cells aligned in parallel to each other. Each of the plurality of transistor cells includes a collector region, a base region, and an emitter region that are disposed above a substrate. A plurality of collector extended wiring lines are each connected to the collector region of a corresponding one of the plurality of transistor cells and are extended in a direction intersecting an alignment direction of the plurality of transistor cells. A collector integrated wiring line connects the plurality of collector extended wiring lines to each other. A collector intermediate integrated wiring line that is disposed between the two cell rows in plan view connects the plurality of collector extended wring lines extended from the plurality of transistor cells that belong to one of the two cell rows to each other.

A semiconductor device includes two cell rows, each of which is formed of a plurality of transistor cells aligned in parallel to each other. Each of the plurality of transistor cells includes a collector region, a base region, and an emitter region that are disposed above a substrate. A plurality of collector extended wiring lines are each connected to the collector region of a corresponding one of the plurality of transistor cells and are extended in a direction intersecting an alignment direction of the plurality of transistor cells. A collector integrated wiring line connects the plurality of collector extended wiring lines to each other. A collector intermediate integrated wiring line that is disposed between the two cell rows in plan view connects the plurality of collector extended wring lines extended from the plurality of transistor cells that belong to one of the two cell rows to each other.

A radio frequency module includes: a duplexer for a first communication band; a first power amplifier and a first low-noise amplifier connected to the duplexer; a second power amplifier and a second low-noise amplifier for a second communication band; and a switch that switches a connection of an antenna connection terminal between the second power amplifier and the second low-noise amplifier, wherein the first power amplifier and the second power amplifier are disposed on a first principal surface of a module substrate, the first low-noise amplifier and the second low-noise amplifier are incorporated in a semiconductor IC disposed on a second principal surface of the module substrate, and in a plan view of the module substrate, the distance between the first power amplifier and the semiconductor IC is greater than the distance between the second power amplifier and the semiconductor IC.

A radio frequency module includes: a duplexer for a first communication band; a first power amplifier and a first low-noise amplifier connected to the duplexer; a second power amplifier and a second low-noise amplifier for a second communication band; and a switch that switches a connection of an antenna connection terminal between the second power amplifier and the second low-noise amplifier, wherein the first power amplifier and the second power amplifier are disposed on a first principal surface of a module substrate, the first low-noise amplifier and the second low-noise amplifier are incorporated in a semiconductor IC disposed on a second principal surface of the module substrate, and in a plan view of the module substrate, the distance between the first power amplifier and the semiconductor IC is greater than the distance between the second power amplifier and the semiconductor IC.

An apparatus includes an amplifier and a bias network. The amplifier generally has a predefined linear range. The bias network is generally connected to an input of the amplifier. The bias network generally comprises a linearizer configured to provide gain expansion and extend linearity of the amplifier beyond the predefined linear range.

An apparatus includes an amplifier and a bias network. The amplifier generally has a predefined linear range. The bias network is generally connected to an input of the amplifier. The bias network generally comprises a linearizer configured to provide gain expansion and extend linearity of the amplifier beyond the predefined linear range.

A semiconductor devices comprises a first member including a first circuit partially formed by an elemental semiconductor element at a surface layer, a first conductive raised portion at the first member, and a second member smaller than the first member in plan view joined to the first member. The second member includes a second circuit partially formed by a compound semiconductor element. A second conductive raised portion is at the second member. A power amplifier includes a first-stage amplifier circuit included in the first or second circuit and a second-stage amplifier circuit included in the second circuit. The first circuit includes a first switch for inputting to the first-stage amplifier circuit a radio-frequency signal inputted to a selected contact, a control circuit to control the first- and second-stage amplifier circuits, and a second switch for outputting from a selected contact a radio-frequency signal outputted by the second-stage amplifier circuit.