A 3D integrated circuit (3D IC) chip is described. The 3D IC chip includes a die having a compound semiconductor high electron mobility transistor (HEMT) active device. The compound semiconductor HEMT active device is composed of compound semiconductor layers on a single crystal, compound semiconductor layer. The 3D IC chip also includes an acoustic device integrated in the single crystal, compound semiconductor layer. The 3D IC chip further includes a passive device integrated in back-end-of-line layers of the die on the single crystal, compound semiconductor layer.

In an embodiment, a device for generating a first current from a second current, comprises: an output transistor configured to generate the first current; a first circuit configured to generate a third current representative of the second current and to draw it from a first node; a second circuit configured to generate a fourth current representative of the first current and to supply it to the first node; and a third circuit receiving a fifth current representative of a difference between the third and fourth currents, the third circuit being configured to generate a sixth current representative of the fifth current and to draw it from a control terminal of the output transistor.

Apparatus and methods for an inverted Doherty amplifier operating at gigahertz frequencies are described. RF fractional bandwidth and signal bandwidth may be increased over a conventional Doherty amplifier configuration when impedance-matching components and an impedance inverter in an output network of the inverted Doherty amplifier are designed based on characteristics of the main and peaking amplifier and asymmetry factor of the amplifier.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

An integrated circuit device package includes a substrate, a first die comprising active electronic components attached to the substrate, and package leads configured to conduct electrical signals between the first die and an external device. At least one integrated interconnect structure is provided on the first die opposite the substrate. The at least one integrated interconnect structure extends from the first die to an adjacent die attached to the substrate and/or to at least one of the package leads, and provides electrical connection therebetween. Related devices and power amplifier circuits are also discussed.

An integrated circuit device package includes a substrate, a first die comprising active electronic components attached to the substrate, and package leads configured to conduct electrical signals between the first die and an external device. At least one integrated interconnect structure is provided on the first die opposite the substrate. The at least one integrated interconnect structure extends from the first die to an adjacent die attached to the substrate and/or to at least one of the package leads, and provides electrical connection therebetween. Related devices and power amplifier circuits are also discussed.

A portable communication device includes a processor positioned in a first printed circuit board; a communication circuit; and an antenna module. The antenna module includes a second printed circuit board; a first antenna and a second antenna positioned in the second printed circuit board; a first transmission-reception circuit positioned in the second printed circuit board. The first transmission-reception circuit comprises a power amplifier for amplifying a signal to be transmitted through the first antenna, and a first low noise amplifier for amplifying a signal received through the first antenna. The power amplifier forms a portion of a transmission path electrically connected with the communication circuit and the first antenna. The first low noise amplifier forms a portion of a first reception path electrically connected with the communication circuit and the first antenna. The transmission path or the first reception path in the first transmission-reception circuit is selectively provided by the communication circuit. The portable communication device also includes a first reception circuit positioned in the second printed circuit board, wherein the first reception circuit does not comprise a power amplifier for amplifying a signal to be transmitted through the second antenna, and comprises a second low noise amplifier for amplifying a signal received through the second antenna, the second low noise amplifier forming a portion of a second reception path electrically connected with the communication circuit and the second antenna.

A portable communication device includes a processor positioned in a first printed circuit board; a communication circuit; and an antenna module. The antenna module includes a second printed circuit board; a first antenna and a second antenna positioned in the second printed circuit board; a first transmission-reception circuit positioned in the second printed circuit board. The first transmission-reception circuit comprises a power amplifier for amplifying a signal to be transmitted through the first antenna, and a first low noise amplifier for amplifying a signal received through the first antenna. The power amplifier forms a portion of a transmission path electrically connected with the communication circuit and the first antenna. The first low noise amplifier forms a portion of a first reception path electrically connected with the communication circuit and the first antenna. The transmission path or the first reception path in the first transmission-reception circuit is selectively provided by the communication circuit. The portable communication device also includes a first reception circuit positioned in the second printed circuit board, wherein the first reception circuit does not comprise a power amplifier for amplifying a signal to be transmitted through the second antenna, and comprises a second low noise amplifier for amplifying a signal received through the second antenna, the second low noise amplifier forming a portion of a second reception path electrically connected with the communication circuit and the second antenna.

An amplifying device includes a current generating circuit, a bias amplifying circuit, and a compensation circuit. The current generating circuit is configured to generate an internal current based on an internal voltage. The bias amplifying circuit, connected to the current generating circuit, is configured to output a bias current generated by amplifying the internal current to a power amplifying circuit. The compensation circuit, connected to the current generating circuit, is configured to adjust the internal voltage based on a bias voltage of the power amplifying circuit.