An amplifying device includes a current generating circuit, a bias amplifying circuit, and a compensation circuit. The current generating circuit is configured to generate an internal current based on an internal voltage. The bias amplifying circuit, connected to the current generating circuit, is configured to output a bias current generated by amplifying the internal current to a power amplifying circuit. The compensation circuit, connected to the current generating circuit, is configured to adjust the internal voltage based on a bias voltage of the power amplifying circuit.

The present disclosure relates to systems and methods for operating transceiver circuitry to transmit or receive signals on various frequency ranges. To do so, a transmitter or a receiver of the transceiver circuitry is selectively coupled to or uncoupled from an antenna of the transceiver circuitry. Additionally, radio frequency filters may be individually or collectively coupled to and/or uncoupled from the antenna to filter different frequencies in the transmitting or receiving signals.

The present disclosure relates to systems and methods for operating transceiver circuitry to transmit or receive signals on various frequency ranges. To do so, a transmitter or a receiver of the transceiver circuitry is selectively coupled to or uncoupled from an antenna of the transceiver circuitry. Additionally, radio frequency filters may be individually or collectively coupled to and/or uncoupled from the antenna to filter different frequencies in the transmitting or receiving signals.

Systems, methods, and apparatus for an improved body tie construction are described. The improved body tie construction is configured to have a lower resistance body tie exists when the transistor is “off” (Vg approximately 0 volts). When the transistor is “on” (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie. Space efficient Body tie constructions adapted for cascode configurations are also described.

Systems, methods, and apparatus for an improved body tie construction are described. The improved body tie construction is configured to have a lower resistance body tie exists when the transistor is “off” (Vg approximately 0 volts). When the transistor is “on” (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie. Space efficient Body tie constructions adapted for cascode configurations are also described.

A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

A Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and first and second peaking amplifier dies. The RF signal splitter divides an input RF signal into first, second, and third input RF signals, and conveys the input RF signals to splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier dies each include one or more additional power transistors configured to amplify, along first and second peaking signal paths, the second and third input RF signals to produce amplified second and third RF signals. The dies are coupled to the substrate so that the RF signal paths through the carrier and one or more of the peaking amplifier dies extend in substantially different (e.g., orthogonal) directions.

A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.

A temperature compensation circuit comprises a temperature coefficient circuit that generates a temperature coefficient that is temperature dependent and a compensation circuit that generates a compensation signal based on an indication of temperature of an amplifier and the temperature coefficient, and based on the compensation signal, a gain of the amplifier is adjusted to improve amplifier linearity during data bursts.

A radio-frequency module (10) includes an IC chip (20) and a mounted component (41, 42, 43) mounted on the IC chip (20). The IC chip (20) includes a core substrate (21) composed of a semiconductor having a first main surface (211) and a second main surface (212) opposed to each other, and a metal wiring layer (22) formed on the first main surface (211) of the core substrate (21) and having a contact surface in contact with the first main surface (211) and a third main surface (221) opposed to the contact surface. The mounted component (41, 42, 43) is mounted at the third main surface (221) side.