An integrated circuit includes a logic circuit and an amplifying circuit, in particular a low-noise amplifying circuit. The amplifying circuit includes at least one first transistor. The gate of the first transistor is coupled to a signal input terminal, the source region and the drain region of the first transistor are formed respectively in the well region of the first transistor on both sides of the gate, wherein the source region is coupled to a reference voltage terminal, and the sheet resistance of the source region is lower than that of the drain region. The logic circuit includes at least one second transistor. The sheet resistances of the source region and the drain region of the second transistor are equal.

A power amplifier circuitry (100) comprises: a transistor stack (110) comprising at least two stacked transistor units (112A, 112B, 112C) for amplifying input signals; wherein each stacked transistor unit (112A, 112B, 112C) comprises a plurality of controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N), each comprising a segment transistor (122, 132, 142), wherein source terminals (123, 133, 143) within each transistor unit are connected, drain terminals (125, 135, 145) within each transistor unit are connected and gate terminals (124, 134, 144) within each transistor unit are connected, wherein each segment transistor (122, 132, 142) further comprises a back gate terminal (126, 136, 146) for setting a body bias, wherein at least two of the segment transistors (122, 132, 142) within each transistor unit have independently connected back gate terminals (126, 136, 146); and a control unit (190) configured to control the body bias for selecting an amplifier class of each of the controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N) of each of the stacked transistor units (112A, 112B, 112C).

A power amplifier circuitry (100) comprises: a transistor stack (110) comprising at least two stacked transistor units (112A, 112B, 112C) for amplifying input signals; wherein each stacked transistor unit (112A, 112B, 112C) comprises a plurality of controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N), each comprising a segment transistor (122, 132, 142), wherein source terminals (123, 133, 143) within each transistor unit are connected, drain terminals (125, 135, 145) within each transistor unit are connected and gate terminals (124, 134, 144) within each transistor unit are connected, wherein each segment transistor (122, 132, 142) further comprises a back gate terminal (126, 136, 146) for setting a body bias, wherein at least two of the segment transistors (122, 132, 142) within each transistor unit have independently connected back gate terminals (126, 136, 146); and a control unit (190) configured to control the body bias for selecting an amplifier class of each of the controllable segments (120-1 to 120-N, 130-1 to 130-N, 140-1 to 140-N) of each of the stacked transistor units (112A, 112B, 112C).

Power amplifier (PA) devices and methods for fabricating PA devices containing inverted power transistor dies are disclosed. In embodiments, the PA device includes a first set of input and output leads, an inverted first power transistor (e.g., peaking) die electrically coupled between the first set of input and output leads, and a base flange. The inverted first power die includes, in turn, a die body having a die frontside and a die backside opposite the die frontside. A power transistor having a first contact region is formed in the die frontside. A frontside layer system is formed over the die frontside and the power transistor, while an electrically-conductive bond layer attaches the inverted first power transistor die to the base flange. The first contact region of the power transistor is electrically coupled to the base flange through the electrically-conductive bond layer and through the frontside layer system.

Power amplifier (PA) devices and methods for fabricating PA devices containing inverted power transistor dies are disclosed. In embodiments, the PA device includes a first set of input and output leads, an inverted first power transistor (e.g., peaking) die electrically coupled between the first set of input and output leads, and a base flange. The inverted first power die includes, in turn, a die body having a die frontside and a die backside opposite the die frontside. A power transistor having a first contact region is formed in the die frontside. A frontside layer system is formed over the die frontside and the power transistor, while an electrically-conductive bond layer attaches the inverted first power transistor die to the base flange. The first contact region of the power transistor is electrically coupled to the base flange through the electrically-conductive bond layer and through the frontside layer system.

An uplink multiple input-multiple output (MIMO) transmitter apparatus using transmit diversity uses transmit diversity signals that are modified to create intermediate orthogonal signals. A transceiver circuit in the transmitter apparatus includes a sigma-delta circuit that creates a summed (sigma) signal and a difference (delta) signal from the intermediate orthogonal signals. These new sigma and delta signals are amplified by power amplifiers to a desired output level before having two signals reconstructed from the amplified sigma and amplified delta signals by a second circuit. These reconstructed signals correspond to the two original transmit diversity signals but are at a desired amplified level relative to the two original signals. The reconstructed signals are then transmitted through respective antennas as uplink signals.

An uplink multiple input-multiple output (MIMO) transmitter apparatus using transmit diversity uses transmit diversity signals that are modified to create intermediate orthogonal signals. A transceiver circuit in the transmitter apparatus includes a sigma-delta circuit that creates a summed (sigma) signal and a difference (delta) signal from the intermediate orthogonal signals. These new sigma and delta signals are amplified by power amplifiers to a desired output level before having two signals reconstructed from the amplified sigma and amplified delta signals by a second circuit. These reconstructed signals correspond to the two original transmit diversity signals but are at a desired amplified level relative to the two original signals. The reconstructed signals are then transmitted through respective antennas as uplink signals.

An envelope tracking (ET) integrated circuit (ETIC) supporting multiple types of power amplifiers. The ETIC includes a pair of tracker circuits configured to generate a pair of low-frequency currents at a pair of output nodes, respectively. The ETIC also includes a pair of ET voltage circuits configured to generate a pair of ET voltages at the output nodes, respectively. In various embodiments disclosed herein, the ETIC can be configured to generate the low-frequency currents independent of what type of power amplifier is coupled to the output nodes. Concurrently, the ETIC can also generate the ET voltages in accordance with the type of power amplifier coupled to the output nodes. As such, it is possible to support multiple types of power amplifiers based on a single ETIC, thus helping to reduce footprint, power consumption, and heat dissipation in an electronic device employing the ETIC and the multiple types of power amplifiers.

An envelope tracking (ET) integrated circuit (ETIC) supporting multiple types of power amplifiers. The ETIC includes a pair of tracker circuits configured to generate a pair of low-frequency currents at a pair of output nodes, respectively. The ETIC also includes a pair of ET voltage circuits configured to generate a pair of ET voltages at the output nodes, respectively. In various embodiments disclosed herein, the ETIC can be configured to generate the low-frequency currents independent of what type of power amplifier is coupled to the output nodes. Concurrently, the ETIC can also generate the ET voltages in accordance with the type of power amplifier coupled to the output nodes. As such, it is possible to support multiple types of power amplifiers based on a single ETIC, thus helping to reduce footprint, power consumption, and heat dissipation in an electronic device employing the ETIC and the multiple types of power amplifiers.

A power amplifier circuit includes a first transistor disposed on a semiconductor substrate; a second transistor that supplies a bias current based on a first current which is a part of a control current to the first transistor; a current output element in which a current flowing therethrough increases in accordance with a rise in temperature; and a wiring portion including a plurality of metal layers that are electrically connected to an emitter of the first transistor and that are stacked one on top of another so as to oppose the semiconductor substrate. At least one metal layer among the plurality of metal layers extends so as to overlap an area extending from at least a part of a first disposition area in which the first transistor is disposed to a second disposition area in which the current output element is disposed in plan view of the semiconductor substrate.