A portable communication device includes a processor positioned in a first printed circuit board; a communication circuit; and an antenna module. The antenna module includes a second printed circuit board; a first antenna and a second antenna positioned in the second printed circuit board; a first transmission-reception circuit positioned in the second printed circuit board. The first transmission-reception circuit comprises a power amplifier for amplifying a signal to be transmitted through the first antenna, and a first low noise amplifier for amplifying a signal received through the first antenna. The power amplifier forms a portion of a transmission path electrically connected with the communication circuit and the first antenna. The first low noise amplifier forms a portion of a first reception path electrically connected with the communication circuit and the first antenna. The transmission path or the first reception path in the first transmission-reception circuit is selectively provided by the communication circuit. The portable communication device also includes a first reception circuit positioned in the second printed circuit board, wherein the first reception circuit does not comprise a power amplifier for amplifying a signal to be transmitted through the second antenna, and comprises a second low noise amplifier for amplifying a signal received through the second antenna, the second low noise amplifier forming a portion of a second reception path electrically connected with the communication circuit and the second antenna.

An amplifier includes a driver stage amplifier transistor and a final stage amplifier transistor, which are integrated in a semiconductor die. The driver stage amplifier transistor has a driver stage input, a driver stage output, and an output impedance, and the driver stage amplifier transistor is configured to operate using a first bias voltage at the driver stage output. The final stage amplifier transistor has a final stage input, a final stage output, and an input impedance. The final stage input is electrically coupled to the driver stage output. The final stage amplifier transistor is configured to operate using a second bias voltage at the final stage output, and the second bias voltage is at least twice as large as the first bias voltage.

An amplifier includes a driver stage amplifier transistor and a final stage amplifier transistor, which are integrated in a semiconductor die. The driver stage amplifier transistor has a driver stage input, a driver stage output, and an output impedance, and the driver stage amplifier transistor is configured to operate using a first bias voltage at the driver stage output. The final stage amplifier transistor has a final stage input, a final stage output, and an input impedance. The final stage input is electrically coupled to the driver stage output. The final stage amplifier transistor is configured to operate using a second bias voltage at the final stage output, and the second bias voltage is at least twice as large as the first bias voltage.

In a transistor formed on a semiconductor die mounted on a substrate, where the transistor output is connected to a circuit on the substrate, a bond pad electrically connected to a transistor drain finger manifold extends less than the full length of the manifold. By controlling the length of the bond pad, the parasitic capacitance it contributes may be controlled. In applications such as a Doherty amplifier, this parasitic capacitance forms part of the quarter-wave transmission line of an impedance inverter, and hence directly impacts amplifier performance. In particular, by reducing the parasitic capacitance contribution from transistor output bond pads, the bandwidth of a Doherty amplifier circuit may be improved. At GHz frequencies and with state of the art transistor device feature sizes, concerns about phase mismatch between drain finger outputs are largely moot.

In a transistor formed on a semiconductor die mounted on a substrate, where the transistor output is connected to a circuit on the substrate, a bond pad electrically connected to a transistor drain finger manifold extends less than the full length of the manifold. By controlling the length of the bond pad, the parasitic capacitance it contributes may be controlled. In applications such as a Doherty amplifier, this parasitic capacitance forms part of the quarter-wave transmission line of an impedance inverter, and hence directly impacts amplifier performance. In particular, by reducing the parasitic capacitance contribution from transistor output bond pads, the bandwidth of a Doherty amplifier circuit may be improved. At GHz frequencies and with state of the art transistor device feature sizes, concerns about phase mismatch between drain finger outputs are largely moot.

An envelope tracking (ET) amplifier apparatus is provided. The ET amplifier apparatus includes an ET integrated circuit (ETIC) having a number of voltage circuits coupled to a common port and configured to generate an ET voltage(s) based on a number of ET target voltages, respectively. In examples discussed herein, a selected voltage circuit(s) in the ETIC receives a maximum ET target voltage among all the ET target voltages and is configured to generate a reference ET voltage based on the maximum ET target voltage. As such, another voltage circuit(s), which happens to receive the maximum ET target voltage, may simply treat the reference ET voltage as a respective ET voltage(s) instead of generating the respective ET voltage(s). As a result, it may be possible to opportunistically turn off or reduce functionality of the voltage circuit(s) to help reduce peak battery current and improve heat dissipation in the ET amplifier apparatus.

An envelope tracking (ET) amplifier apparatus is provided. The ET amplifier apparatus includes an ET integrated circuit (ETIC) having a number of voltage circuits coupled to a common port and configured to generate an ET voltage(s) based on a number of ET target voltages, respectively. In examples discussed herein, a selected voltage circuit(s) in the ETIC receives a maximum ET target voltage among all the ET target voltages and is configured to generate a reference ET voltage based on the maximum ET target voltage. As such, another voltage circuit(s), which happens to receive the maximum ET target voltage, may simply treat the reference ET voltage as a respective ET voltage(s) instead of generating the respective ET voltage(s). As a result, it may be possible to opportunistically turn off or reduce functionality of the voltage circuit(s) to help reduce peak battery current and improve heat dissipation in the ET amplifier apparatus.

An amplifier includes a driver stage amplifier transistor and a final stage amplifier transistor, which are integrated in a semiconductor die. The driver stage amplifier transistor has a driver stage input, a driver stage output, and an output impedance, and the driver stage amplifier transistor is configured to operate using a first bias voltage at the driver stage output. The final stage amplifier transistor has a final stage input, a final stage output, and an input impedance. The final stage input is electrically coupled to the driver stage output. The final stage amplifier transistor is configured to operate using a second bias voltage at the final stage output, and the second bias voltage is at least twice as large as the first bias voltage.

An amplifier includes a driver stage amplifier transistor and a final stage amplifier transistor, which are integrated in a semiconductor die. The driver stage amplifier transistor has a driver stage input, a driver stage output, and an output impedance, and the driver stage amplifier transistor is configured to operate using a first bias voltage at the driver stage output. The final stage amplifier transistor has a final stage input, a final stage output, and an input impedance. The final stage input is electrically coupled to the driver stage output. The final stage amplifier transistor is configured to operate using a second bias voltage at the final stage output, and the second bias voltage is at least twice as large as the first bias voltage.

A multiple-stage amplifier includes a driver stage transistor characterized by a first power density, and a final stage transistor characterized by a second power density that is larger than the first power density. A first drain bias circuit is coupled to a first drain terminal of the driver stage transistor, and is configured to provide a first drain bias voltage to the first drain terminal. A second drain bias circuit is coupled to a second drain terminal of the final stage transistor, and is configured to provide a second drain bias voltage to the second drain terminal, where the second drain bias voltage equals the first drain bias voltage. An interstage impedance matching circuit is coupled between the first drain terminal and a gate terminal of the final stage transistor. The multiple-stage amplifier may be included in a Doherty power amplifier, a transceiver, and/or a transceiver array.