A receiver includes an amplification block supporting carrier aggregation (CA). The amplification block includes a first amplifier circuit configured to receive a radio frequency (RF) input signal at a block node from an outside source, amplify the RF input signal, and output the amplified RF input signal as a first RF output signal. The first amplifier circuit includes a first amplifier configured to receive the RF input signal through a first input node to amplify the RF input signal, and a first feedback circuit coupled between the first input node and a first internal amplification node of the first amplifier to provide feedback to the first amplifier.

A first wiring is disposed above operating regions of plural unit transistors formed on a substrate. A second wiring is disposed above the substrate. An insulating film is disposed on the first and second wirings. First and second cavities are formed in the insulating film. As viewed from above, the first and second cavities entirely overlap with the first and second wirings, respectively. A first bump is disposed on the insulating film and is electrically connected to the first wiring via the first cavity. A second bump is disposed on the insulating film and is electrically connected to the second wiring via the second cavity. As viewed from above, at least one of the plural operating regions is disposed within the first bump and is at least partially disposed outside the first cavity. The planar configuration of the first cavity and that of the second cavity are substantially identical.

Two transistor rows are arranged on or in a substrate. Each of the two transistor rows is configured by a plurality of transistors aligned in a first direction, and the two transistor rows are arranged at an interval in a second direction orthogonal to the first direction. A first wiring is arranged between the two transistor rows when seen from above. The first wiring is connected to collectors or drains of the plurality of transistors in the two transistor rows. The first bump overlaps with the first wiring when seen from above, is arranged between the two transistor rows, and is connected to the first wiring.

Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.

Integrated Doherty power amplifiers are provided herein. In certain implementations, a Doherty power amplifier includes a carrier amplification stage that generates a carrier signal, a peaking amplification stage that generates a peaking signal, and an antenna structure that combines the carrier signal and the peaking signal. The antenna structure radiates a transmit wave in which the carrier signal and the peaking signal are combined with a phase shift.

An envelope tracking system is disclosed having an envelope tracking integrated circuit (ETIC) with a first tracker having a first supply output and a second tracker having a second supply output, wherein the ETIC has a first mode in which only one of the first and second trackers supplies voltage and a second mode in which the first and second trackers both supply voltage. A first notch filter is coupled to the first supply output and a second notch filter is coupled to the second supply output. A mode switch coupled between the first supply output and the second supply output is configured to couple the first notch filter and the second notch filter in parallel in the first mode and open the mode switch to decouple the first notch filter from the second notch filter in the second mode in response to first and second switch control signals, respectively.

An envelope tracking system is disclosed having an envelope tracking integrated circuit (ETIC) with a first tracker having a first supply output and a second tracker having a second supply output, wherein the ETIC has a first mode in which only one of the first and second trackers supplies voltage and a second mode in which the first and second trackers both supply voltage. A first notch filter is coupled to the first supply output and a second notch filter is coupled to the second supply output. A mode switch coupled between the first supply output and the second supply output is configured to couple the first notch filter and the second notch filter in parallel in the first mode and open the mode switch to decouple the first notch filter from the second notch filter in the second mode in response to first and second switch control signals, respectively.

A dual-input envelope tracking (ET) integrated circuit (ETIC) and related apparatus are provided. The dual-input ETIC includes an ET voltage circuit configured to generate an ET voltage based on an ET voltage and a first set of parameters. The ET voltage may be provided to a power amplifier circuit(s) for amplifying a radio frequency (RF) signal(s) in an ET power range. The dual-input ETIC also includes a target voltage processing circuit configured to generate the ET target voltage based on a second set of parameters. The dual-input ETIC further includes a control circuit configured to determine the first set of parameters and the second set parameters based at least on the ET power range of the power amplifier circuit(s). As such, it may be possible to optimize the dual-input ETIC performance in a wide-range of modulation bandwidth, thus helping to improve linearity and efficiency of the power amplifier circuit(s).

A dual-input envelope tracking (ET) integrated circuit (ETIC) and related apparatus are provided. The dual-input ETIC includes an ET voltage circuit configured to generate an ET voltage based on an ET voltage and a first set of parameters. The ET voltage may be provided to a power amplifier circuit(s) for amplifying a radio frequency (RF) signal(s) in an ET power range. The dual-input ETIC also includes a target voltage processing circuit configured to generate the ET target voltage based on a second set of parameters. The dual-input ETIC further includes a control circuit configured to determine the first set of parameters and the second set parameters based at least on the ET power range of the power amplifier circuit(s). As such, it may be possible to optimize the dual-input ETIC performance in a wide-range of modulation bandwidth, thus helping to improve linearity and efficiency of the power amplifier circuit(s).

In a radio frequency power amplifier, a semiconductor chip includes at least one first transistor amplifying a radio frequency signal, a first external-connection conductive member connected to the first transistor, a bias circuit including a second transistor that applies a bias voltage to the first transistor, and a second external-connection conductive member connected to the second transistor. The second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.