A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

Various embodiments of the present technology may comprise methods and apparatus for an amplifier circuit. Methods and apparatus for an amplifier circuit according to various aspects of the present invention may be utilized in a digital-to-analog converter. The amplifier circuit may comprise a first operational amplifier with a feedback circuit. The feedback circuit may comprise an inverting amplifier circuit.

Various embodiments of the present technology may comprise methods and apparatus for an amplifier circuit. Methods and apparatus for an amplifier circuit according to various aspects of the present invention may be utilized in a digital-to-analog converter. The amplifier circuit may comprise a first operational amplifier with a feedback circuit. The feedback circuit may comprise an inverting amplifier circuit.

A semiconductor amplifier circuit has a driver that outputs a drive signal corresponding to an input signal and switches drive capability of the drive signal in accordance with a logic of an instruction signal, an instruction signal setting unit that sets the logic of the instruction signal in accordance with whether the input signal satisfies a predetermined condition, and an output circuit that comprises a control terminal to which the drive signal is input and an output terminal that outputs a signal obtained by amplifying the input signal.

A semiconductor device includes a semiconductor substrate including a principal surface parallel to a plane defined by a first direction and a second direction substantially orthogonal to the first direction, and the principal surface having a first side parallel to the first direction; first unit transistors, each amplifying a first signal in a first frequency band to output a second signal; and second unit transistors, each amplifying the second signal to output a third signal and aligned in the second direction between the first side and a substrate center line in the first direction in plan view of the principal surface. A first center line in the first direction of a region in which the first unit transistors are aligned is farther from the first side than a second center line in the first direction of a region in which the second unit transistors are aligned.

A semiconductor device includes a semiconductor substrate including a principal surface parallel to a plane defined by a first direction and a second direction substantially orthogonal to the first direction, and the principal surface having a first side parallel to the first direction; first unit transistors, each amplifying a first signal in a first frequency band to output a second signal; and second unit transistors, each amplifying the second signal to output a third signal and aligned in the second direction between the first side and a substrate center line in the first direction in plan view of the principal surface. A first center line in the first direction of a region in which the first unit transistors are aligned is farther from the first side than a second center line in the first direction of a region in which the second unit transistors are aligned.

A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

A power amplifier (PA) circuit includes a circuit for generating a supply voltage at an upper voltage rail for a power amplifier (PA). The circuit includes a DC-to-DC converter for generating a voltage from which the supply voltage is generated; a linear amplifier for sourcing or sinking current to or from the upper voltage rail via a capacitor for performing fine adjustment of the supply voltage; a first switching device coupled between an output of the linear amplifier and a lower voltage rail to selectively assist the linear amplifier sink current through the capacitor to deal with actual or anticipated transient response of the supply voltage; and a second switching device coupled between the upper voltage rail and the lower voltage rail to selectively discharge the capacitor in response to actual or anticipated transient response of the supply voltage.