A method and transmitter for a Doherty power amplifier are provided. According to one aspect, a radio transmitter includes, for each carrier frequency, a filter, a main path and a peak path. The filter suppresses signals outside the selected frequency band to produce a filter output. The main path is configured to make a first adjustment of a magnitude and phase of the filter output to produce a main path signal. The peak path is configured to make a second adjustment of the magnitude and phase of the filter output to produce a peak path signal, a difference between the first adjustment and the second adjustment being dependent on the carrier frequency. Main path signals for each carrier frequency produce a composite main path signal. Peak path signals for each carrier frequency produce a composite peak path signal.

An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.

An integrated circuit that includes a die with an active radio frequency (RF) unit embedded thereon; a first port for receiving an output signal from the active RF unit; a harmonic filter that comprises a first harmonic filter inductor; and a first RF inductive load that is electrically coupled to the first port and is magnetically coupled to the first harmonic filter inductor.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A bias circuit for supplying a bias current to an RF power amplifier by using a field-effect transistor (FET) that is controlled by a logic control signal, such as a CMOS logic control signal, for turning on or turning off the bias current supplied to the RF power amplifier, wherein the bias current will be supplied to the RF power amplifier when the FET is on, and the bias current will not be supplied to the RF power amplifier when the FET is off.

A bias circuit for supplying a bias current to an RF power amplifier by using a field-effect transistor (FET) that is controlled by a logic control signal, such as a CMOS logic control signal, for turning on or turning off the bias current supplied to the RF power amplifier, wherein the bias current will be supplied to the RF power amplifier when the FET is on, and the bias current will not be supplied to the RF power amplifier when the FET is off.

A voltage generation circuit and related envelope tracking (ET) amplifier apparatus is provided. In examples discussed herein, a voltage generation circuit can be provided in an ET amplifier apparatus to provide a supply voltage to a voltage amplifier(s) that is configured to generate an ET voltage for an amplifier circuit(s). In a non-limiting example, the voltage amplifier(s) receives an ET target voltage signal corresponding to a time-variant target voltage envelope and generates the ET voltage conforming to the time-variant target voltage envelope. The voltage generation circuit is configured to generate one or more supply voltages and selectively provide one of the supply voltages to the voltage amplifier(s) in accordance to the time-variant target voltage envelope. By selectively providing the supply voltage based on the time-variant target voltage envelope, it may be possible to improve efficiency of the voltage amplifier, thus helping to improve efficiency and linearity of the amplifier circuit(s).

A voltage generation circuit and related envelope tracking (ET) amplifier apparatus is provided. In examples discussed herein, a voltage generation circuit can be provided in an ET amplifier apparatus to provide a supply voltage to a voltage amplifier(s) that is configured to generate an ET voltage for an amplifier circuit(s). In a non-limiting example, the voltage amplifier(s) receives an ET target voltage signal corresponding to a time-variant target voltage envelope and generates the ET voltage conforming to the time-variant target voltage envelope. The voltage generation circuit is configured to generate one or more supply voltages and selectively provide one of the supply voltages to the voltage amplifier(s) in accordance to the time-variant target voltage envelope. By selectively providing the supply voltage based on the time-variant target voltage envelope, it may be possible to improve efficiency of the voltage amplifier, thus helping to improve efficiency and linearity of the amplifier circuit(s).

Embodiments of a method and device are disclosed. In an embodiment, a Doherty amplifier module includes a substrate including a mounting surface, and a carrier amplifier die, a first peaking amplifier die, and a second peaking amplifier die on the mounting surface. The carrier amplifier die includes a first output bond pad that has a first length and a first width. The first peaking amplifier die includes a second output bond pad including a first main pad portion having a second length and a second width and including a first side pad portion having a third length and a third width. At least one of the second width or the third width is greater than the first width. The second peaking amplifier includes a third output bond pad. A first wirebond array is coupled between the third output bond pad and at least the first side pad portion.