A circuit includes a first transistor having a first control input and first and current terminals. The circuit also includes a second transistor having a second control input and third and fourth current terminals. The third current terminal couples to the first current terminal at a first node. An output stage has a first input, a second input, and an output stage output. The first input couples to the fourth current terminal, and the second input couples to the second current terminal. A resistor has first and second resistor terminals. The first resistor terminal couples to the output stage output, and the second resistor terminal couples to the second control input. A third transistor has a third control input, a fifth current terminal, and a sixth current terminal. The fifth current terminal couples to the first resistor terminal, and the sixth current terminal couples to the second resistor terminal.

A circuit includes a first transistor having a first control input and first and current terminals. The circuit also includes a second transistor having a second control input and third and fourth current terminals. The third current terminal couples to the first current terminal at a first node. An output stage has a first input, a second input, and an output stage output. The first input couples to the fourth current terminal, and the second input couples to the second current terminal. A resistor has first and second resistor terminals. The first resistor terminal couples to the output stage output, and the second resistor terminal couples to the second control input. A third transistor has a third control input, a fifth current terminal, and a sixth current terminal. The fifth current terminal couples to the first resistor terminal, and the sixth current terminal couples to the second resistor terminal.

A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

A semiconductor device includes a semiconductor substrate, a transistor, and a first harmonic termination circuit. The transistor is formed at the semiconductor substrate. The transistor amplifies an input signal supplied to an input end and outputs an amplified signal through an output end. The first harmonic termination circuit attenuates a harmonic component included in the amplified signal. The first harmonic termination circuit is formed at the semiconductor substrate such that one end of the first harmonic termination circuit is connected to the output end of the transistor and the other end of the first harmonic termination circuit is connected to a ground end of the transistor.

A radio frequency (RF) amplifier circuit includes a field effect transistor (FET) (e.g., a FET belonging to a III-V FET enhancement group), where the FET includes a gate terminal coupled to an RF input node. The circuit further includes a prematch and biasing network coupled between a bias voltage node and the RF input node. The prematch and biasing network includes a nonlinear gate current blocking device configured to block a current from flowing between the bias voltage node and the RF input node.

A radio frequency (RF) amplifier circuit includes a field effect transistor (FET) (e.g., a FET belonging to a III-V FET enhancement group), where the FET includes a gate terminal coupled to an RF input node. The circuit further includes a prematch and biasing network coupled between a bias voltage node and the RF input node. The prematch and biasing network includes a nonlinear gate current blocking device configured to block a current from flowing between the bias voltage node and the RF input node.

Antenna waveguide transitions for solid state power amplifiers (SSPAs) are disclosed. An SSPA includes a waveguide channel that is configured to propagate an input signal, such as an electromagnetic signal, from an input port to a solid state amplifier for amplification. The waveguide channel is further configured to propagate an amplified signal from the solid state amplifier to an output port. Waveguide transitions to and from the solid state amplifier are bandwidth matched to the waveguide channel. Additionally, the waveguide transitions may be thermally coupled to the waveguide channel. The waveguide transitions may include antenna structures that have a signal conductor and a ground conductor. In this manner, the SSPA may have improved broadband coupling as well as improved thermal dissipation for heat generated by the solid state amplifier.

Antenna waveguide transitions for solid state power amplifiers (SSPAs) are disclosed. An SSPA includes a waveguide channel that is configured to propagate an input signal, such as an electromagnetic signal, from an input port to a solid state amplifier for amplification. The waveguide channel is further configured to propagate an amplified signal from the solid state amplifier to an output port. Waveguide transitions to and from the solid state amplifier are bandwidth matched to the waveguide channel. Additionally, the waveguide transitions may be thermally coupled to the waveguide channel. The waveguide transitions may include antenna structures that have a signal conductor and a ground conductor. In this manner, the SSPA may have improved broadband coupling as well as improved thermal dissipation for heat generated by the solid state amplifier.

Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain droop due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.

Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain droop due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.