A solid-state semiconductor guitar amplifier system/method mimicking the audio performance characteristics of conventional vacuum tube guitar amplifiers is disclosed. The disclosed system/method incorporates solid-state semiconductor circuitry implementing an input audio preamplifier (IAP) having asymmetric gain control (AGC) that feeds wave shape transformer (WST) circuitry implementing a piecewise/diode breakpoint (PDB) transform that emulates a conventional vacuum tube voltage-current transfer (VIT) characteristic. A breakpoint threshold controller (BTC) determines the offset associated with application of the PDB operation to the audio signal. Once the PDB transform has been applied to the audio signal, it is further processed by pick attack sag compressor (PAC) circuitry that applies positive sag control (PSC) and negative sag control (NSC) compression envelopes to the overall signal shape before presenting the resulting peak compressed signal through an audio volume control (AVC) and conventional solid-state semiconductor speaker power amplifier (SPA) for application to an audio speaker.

A solid-state semiconductor guitar amplifier system/method mimicking the audio performance characteristics of conventional vacuum tube guitar amplifiers is disclosed. The disclosed system/method incorporates solid-state semiconductor circuitry implementing an input audio preamplifier (IAP) having asymmetric gain control (AGC) that feeds wave shape transformer (WST) circuitry implementing a piecewise/diode breakpoint (PDB) transform that emulates a conventional vacuum tube voltage-current transfer (VIT) characteristic. A breakpoint threshold controller (BTC) determines the offset associated with application of the PDB operation to the audio signal. Once the PDB transform has been applied to the audio signal, it is further processed by pick attack sag compressor (PAC) circuitry that applies positive sag control (PSC) and negative sag control (NSC) compression envelopes to the overall signal shape before presenting the resulting peak compressed signal through an audio volume control (AVC) and conventional solid-state semiconductor speaker power amplifier (SPA) for application to an audio speaker.

Disclosed in the present invention are a radio frequency power amplifier based on current detection feedback and a chip. The radio frequency power amplifier comprises multiple stages of amplifier circuits and at least one current detection feedback circuit; the input end of the current detection feedback circuit is connected to the input end of a current stage of amplifier circuit among the multiple stages of amplifier circuits by means of a corresponding resistor, and the output end of the current detection feedback circuit is connected to the input end of at least one stage of amplifier circuit prior to the current stage of amplifier circuit. The current detection feedback circuit generates, according to the detected quiescent operating current of the current stage of amplifier circuit, a control voltage varying inversely with the quiescent operating current, so that the current detection feedback circuit outputs current varying positively with the control voltage.

Disclosed in the present invention are a radio frequency power amplifier based on current detection feedback and a chip. The radio frequency power amplifier comprises multiple stages of amplifier circuits and at least one current detection feedback circuit; the input end of the current detection feedback circuit is connected to the input end of a current stage of amplifier circuit among the multiple stages of amplifier circuits by means of a corresponding resistor, and the output end of the current detection feedback circuit is connected to the input end of at least one stage of amplifier circuit prior to the current stage of amplifier circuit. The current detection feedback circuit generates, according to the detected quiescent operating current of the current stage of amplifier circuit, a control voltage varying inversely with the quiescent operating current, so that the current detection feedback circuit outputs current varying positively with the control voltage.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

Monolithic microwave integrated circuits are provided that include a substrate, a transmit/receive selection device that is formed on the substrate, a high power amplifier formed on the substrate and coupled to a first RF port of the transmit/receive selection device, a low noise amplifier formed on the substrate and coupled to a second RF port of the transmit/receive selection device and a protection circuit that is coupled to a first control port of the transmit/receive selection device.

Monolithic microwave integrated circuits are provided that include a substrate, a transmit/receive selection device that is formed on the substrate, a high power amplifier formed on the substrate and coupled to a first RF port of the transmit/receive selection device, a low noise amplifier formed on the substrate and coupled to a second RF port of the transmit/receive selection device and a protection circuit that is coupled to a first control port of the transmit/receive selection device.

A group delay optimization circuit is provided. The group delay optimization circuit receives a first signal (e.g., a voltage signal) and a second signal (e.g., a current signal). Notably, the first signal and the second signal may experience different group delays that can cause the first signal and the second signal to misalign at an amplifier circuit configured to amplify a radio frequency (RF) signal. The group delay optimization circuit is configured to determine a statistical indicator indicative of a group delay offset between the first signal and the second signal. Accordingly, the group delay optimization circuit may minimize the group delay offset by reducing the statistical indicator to below a defined threshold in one or more group delay optimization cycles. As a result, it may be possible to pre-compensate for the group delay offset in the RF signal, thus helping to improve efficiency and linearity of the amplifier circuit.

A group delay optimization circuit is provided. The group delay optimization circuit receives a first signal (e.g., a voltage signal) and a second signal (e.g., a current signal). Notably, the first signal and the second signal may experience different group delays that can cause the first signal and the second signal to misalign at an amplifier circuit configured to amplify a radio frequency (RF) signal. The group delay optimization circuit is configured to determine a statistical indicator indicative of a group delay offset between the first signal and the second signal. Accordingly, the group delay optimization circuit may minimize the group delay offset by reducing the statistical indicator to below a defined threshold in one or more group delay optimization cycles. As a result, it may be possible to pre-compensate for the group delay offset in the RF signal, thus helping to improve efficiency and linearity of the amplifier circuit.