An amplifier apparatus (332) comprises a main linear amplifier sub-circuit (402) having a main driving signal input terminal (331) and a main amplifier output terminal (406). The apparatus also comprises an auxiliary linear amplifier sub-circuit (404) having an auxiliary driving signal input terminal (357) and an auxiliary amplifier output terminal (408). A combining network (410) is operably coupled between the main amplifier output terminal (406) and the auxiliary amplifier output terminal (408), the combining network (410) having a main-side terminal (424) and an auxiliary-side terminal (434). The main linear amplifier sub-circuit (402) is arranged to generate, when in use, a main amplified signal in response to a main driving signal applied at the main driving signal input terminal (331). The auxiliary linear amplifier sub-circuit (404) is arranged to generate, when in use, an impedance modifying signal at the auxiliary-side terminal (357) in response to an auxiliary driving signal and at substantially the same time as the main linear amplifier sub-circuit (402) generates the main amplified signal, the auxiliary linear amplifier sub-circuit (404) also being arranged to amplify substantially more than half of each wave cycle of the auxiliary driving signal.

A power amplifier includes an input terminal configured to receive a low voltage input signal, an output terminal configured to output a high voltage output signal, and a plurality of amplifiers stacked in series between a first voltage terminal and a second voltage terminal. Each of the amplifiers includes an input capacitor, an output capacitor, an input coupled to the input terminal through the input capacitor, an output coupled to the output terminal through the output capacitor, and a feedback element coupled between the input and the output of the amplifier.

A Doherty amplifier has a first amplifier path that includes a first amplifier, a second amplifier path that includes a second amplifier, a power divider, and a short-circuited stub. The power divider receives an RF signal and divides the RF signal into first and second input signals. The power divider includes first and second power divider outputs that produce the first and second input signals, respectively. The short-circuited stub is coupled between the first power divider output and the first amplifier or between the second power divider output and the second amplifier. The first and second amplifier paths are characterized by first and second frequency-dependent insertion phases, respectively. A slope of the first or second frequency-dependent insertion phase is altered by the short-circuited stub. The power divider produces the first and second input signals with a quadrature phase shift.

An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal. The wherein the asymmetrical parallel-combining transformer may include (a) a HP primary winding that is constructed and arranged to receive the HP amplified signal; (b) LP primary windings that are constructed and arranged to receive the LP amplified signal; and (c) secondary windings that are magnetically coupled to the HP primary winding and to the LP primary windings, and are constructed and arranged to output a output signal.

A gallium nitride (GaN) power amplifier having a plurality of amplifier stages integrated into a monolithic integrated circuit is disclosed. The plurality of amplifier stages is coupled together between a radio frequency signal input and a radio frequency signal output, wherein at least one of the plurality of amplifier stages includes a first GaN transistor that is configured to have a first breakdown voltage that is no more than 75% of a second breakdown voltage of a second GaN transistor included in a different one of the plurality of amplifier stages.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

A power amplifier includes an input terminal configured to receive a low voltage input signal, an output terminal configured to output a high voltage output signal, and a plurality of amplifiers stacked in series between a first voltage terminal and a second voltage terminal. Each of the amplifiers includes an input capacitor, an output capacitor, an input coupled to the input terminal through the input capacitor, an output coupled to the output terminal through the output capacitor, and a feedback element coupled between the input and the output of the amplifier.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

A gain adjustment unit constituted by a distribution switch having a control terminal is provided in an input unit of an amplifier circuit. One end of a coupler is connected to an output line of the amplifier circuit, another end of the coupler is connected to an anode of a diode, and a monitor terminal is connected via a low-pass filter to a cathode of the diode. The anode of the diode is unbiased.