A power amplifier using an equivalent transformer is provided. The power amplifier includes amplifiers and T lines having first terminals connected to the amplifiers and second terminals connected to output sides. Accordingly, powers are combined using the equivalent transformer in the power amplifier, such that an insertion loss can be reduced and thus degradation of output power efficiency can be prevented.

A multi-bit digital signal that is generated by modulating a baseband signal by a modulation circuit and includes components in a radio frequency band is amplified by switch-mode amplifiers (100-1, 100-2) on a bit-by-bit basis, amplified signals are band-limited by frequency-variable variable band limiting units (201-1, 201-2) and thereafter subjected to voltage-to-current conversion by voltage/current source conversion units (202-1, 202-2) provided with variable capacitances, the signals converted to current are synthesized at a synthesis point X, and a resultant signal is impedance-corrected by an impedance correction unit (203) and output as a transmission signal to an antenna of a load (300). Consequently, the present invention provides a transmitter capable of synthesizing output signals from a plurality of switch-mode amplifiers and transmitting a resultant signal while maintaining an impedance characteristic with respect to a plurality of transmit frequencies without increasing a circuit size.

An apparatus includes a first directional coupler, a second directional coupler, a first detector, and a second detector. A through port of the first directional coupler is coupled to a through port of the second directional coupler. An isolated port of the first directional coupler is coupled to an isolated port of the second directional coupler. A coupled port of the first directional coupler is coupled to the first detector. A coupled port of the second directional coupler is coupled to the second detector. A detected power signal is generated by combining an output of the first detector and an output of the second detector.

A gallium nitride (GaN) power amplifier having a plurality of amplifier stages integrated into a monolithic integrated circuit is disclosed. The plurality of amplifier stages is coupled together between a radio frequency signal input and a radio frequency signal output, wherein at least one of the plurality of amplifier stages includes a first GaN transistor that is configured to have a first breakdown voltage that is no more than 75% of a second breakdown voltage of a second GaN transistor included in a different one of the plurality of amplifier stages.

A device includes a substrate and a package input terminal. The device includes a driver amplifier mounted to the substrate and configured to receive a radio frequency input signal. A first amplifier is mounted to the substrate. The first amplifier includes a first amplifier input terminal. A second amplifier is mounted to the substrate. The second amplifier includes a second amplifier input terminal. An inter-stage network is connected between the driver amplifier and the first amplifier and between the driver amplifier and the second amplifier. The inter-stage network includes a first capacitor connected between the driver amplifier and the first amplifier input terminal, and an inductor having a first terminal and a second terminal. The first terminal of the inductor is connected to the first capacitor. The inter-stage network includes a second capacitor connected between the second terminal of the inductor and the second amplifier input terminal.

The disclosure relates to a circuit comprising a balun portion, a balanced side impedance transforming element and an unbalanced side impedance transforming element. The balun portion at least partly transforms the signal between a balanced signal input/output terminal and an unbalanced signal input/output terminal. The impedance transforming elements at least partly alter the impedance presented at the balanced and unbalanced side of the balun. In addition at least one matching transmission element is provided. By separating the role of impedance transformation from balun signal conversion, the useful bandwidth of the circuit can be improved in comparison to a balun that provides both signal conversion and impedance transformation functions.

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.

A power amplifier includes a two-dimensional matrix of NM active cells formed by stacking main terminals of multiple active cells in series. The stacks are coupled in parallel to form the two-dimensional matrix. The power amplifier includes a driver structure to coordinate the driving of the active cells so that the effective output power of the two-dimensional matrix is approximately NM the output power of each of the active cells.

An embodiment of a distributed amplifier includes an output collection line, a plurality of tap nodes distributed along the output collection line, and a plurality of amplification paths coupled to the tap nodes. An embodiment of an amplification path includes an amplifier and a compensation circuit. The amplifier is configured to receive and amplify an input RF signal to produce an amplified RF signal at an amplifier output. A compensation circuit input is electrically coupled to the amplifier output, and a compensation circuit output is electrically coupled to one of the tap nodes. The compensation circuit includes a series inductance electrically coupled between the compensation circuit input and the compensation circuit output, and a shunt capacitance electrically coupled between the series inductance and a ground reference node. The amplifiers and the compensation circuit may be monolithically implemented on a single substrate, or may be implemented on separate substrates.

A system and method for a packaged device with harmonic control are presented. In one embodiment, a device includes a substrate and a transistor die coupled to the substrate. The transistor die includes a plurality of transistor cells. Each transistor cell in the plurality of transistor cells includes a control (e.g., gate) terminal. The device includes a second die coupled to the substrate. The second die includes a plurality of individual shunt capacitors coupled between the control terminals of the plurality of transistor cells and a ground reference node. The capacitance values of at least two of the shunt capacitors are significantly different.