A power amplifier using N-way Doherty structure with adaptive bias supply power tracking for extending the efficiency region over the high peak-to-average power ratio of the multiplexing modulated signals such as wideband code division multiple access and orthogonal frequency division multiplexing is disclosed. In an embodiment, present invention uses a dual-feed distributed structure to an N-way Doherty amplifier to improve the isolation between at least one main amplifier and at least one peaking amplifier and, and also to improve both gain and efficiency performance at high output back-off power. Hybrid couplers can be used at either or both of the input and output. In at least some implementations, circuit space is also conserved due to the integration of amplification, power splitting and combining.

A packaged transistor amplifier includes a package having an input lead and an output lead; a transistor stage having a plurality of unit cell transistors that are electrically coupled to the input lead in parallel, each of the unit cell transistors having an output; a first output bond pad that is coupled to a first subset of the outputs of the unit cell transistors by a first feed network; a second output bond pad that is separate from the first output bond pad, the second output bond pad coupled to a second subset of the outputs of the unit cell transistors by a second feed network; a first output bond wire coupled between the first output bond pad and the output lead; and a second output bond wire coupled between the second output bond pad and the output lead. Related design methods are also provided.

An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.

A distributed driver for an optic signal generator has a first amplifier cell with one or more amplifiers configured to receive and amplify an input signal to create a first amplified signal. A second amplifier cell has one or more amplifiers configured to receive and amplify the input signal to create a second amplified signal. A first conductive path and second conductive path connects to the first amplifier cell and the second amplifier cell such that the inductance associated with the first and second conductive path counteracts a capacitance associated with the first amplifier cell and the second amplifier cell. A variable capacitor may be part of the first amplifier cell and/or the second amplifier cell to selectively tune the capacitance of the distributed driver. A distributed bias circuit may be part of the first amplifier cell and/or the second amplifier cell to bias an optic signal transmitter.

A packaged transistor amplifier includes a package having an input lead and an output lead; a transistor stage having a plurality of unit cell transistors that are electrically coupled to the input lead in parallel, each of the unit cell transistors having an output; a first output bond pad that is coupled to a first subset of the outputs of the unit cell transistors by a first feed network; a second output bond pad that is separate from the first output bond pad, the second output bond pad coupled to a second subset of the outputs of the unit cell transistors by a second feed network; a first output bond wire coupled between the first output bond pad and the output lead; and a second output bond wire coupled between the second output bond pad and the output lead. Related design methods are also provided.

The present disclosure relates to an integrated wideband Radio Frequency (RF) amplifier, based on a complementary metal oxide semiconductor (CMOS) technology. In an embodiment the amplifier addresses the shortcomings of conventional wideband amplifiers and is based on a distributed amplifier (DA) topology which typically exhibit severe performance degradation when externally loaded with parasitic circuit elements. In an embodiment of the present invention a buffer amplifier at the output of a conventional DA is able to compensate the impact of parasitic elements. The disclosed circuit can be implemented by fabricating the wideband RF amplifier integrated circuit (IC) on a 130 nm CMOS technology or other comparable CMOS technologies.

A distributed amplifier includes an input transmission circuit, an output transmission circuit, at least one cascode amplifier coupled between said input and output transmission circuits. Each cascode amplifier includes a first common-gate configured transistor coupled to the output transmission circuit, a common-source configured transistor coupled between the input transmission circuit and the common-gate configured transistor, and a second common-gate configured transistor coupled between the first common-gate configured transistor and common-source configured transistor.

A distributed amplifier with improved stabilization includes an input transmission circuit, an output transmission circuit, at least one cascode amplifier coupled between said input and output transmission circuits. Each cascode amplifier includes a common-gate configured transistor coupled to the output transmission circuit, and a common-source configured transistor coupled between the input transmission circuit and the common-gate configured transistor. The distributed amplifier also includes a non-parasitic resistance and capacitance coupled in series between a drain and a gate of at least one of the common-gate configured transistors for increasing the amplifier stability.

An amplifier with switchable and tunable harmonic terminations and a variable impedance matching network is presented. The amplifier can adapt to different modes and different frequency bands of operation by appropriate switching and/or tuning of the harmonic terminations and/or the variable impedance matching network.

A radio frequency (RF) power amplifier includes an amplifying stage that includes an amplifying module, an input module and a feedback module. The amplifying module receives an RF to-be-amplified signal, and performs power amplification on the RF to-be-amplified signal to generate an RF output signal. The input module receives an RF input signal. The feedback module receives the RF output signal, cooperates with the input module to provide the RF to-be-amplified signal based on the RF input and output signals, and cooperates with the amplifying module to forma positive feedback loop that provides a loop gain which is less than one.