An apparatus includes a bypass circuit a resistor circuit and multiple staggered circuits. The bypass circuit may have a predetermined number of a plurality of transistors connected in series between an input node and an output node. The resistor circuit may have a given number of resistors connected in series between the input node and the output node. Adjoining pairs of the resistors may be connected at given nodes. The staggered circuits may be connected between the given nodes and either the input node or the output node. Each staggered circuit may have a respective number of the transistors connected in series. The bypass circuit, the resistor circuit and the staggered circuits may form part of a bridge attenuator.

A circuit comprises a Sallen-Key filter, which includes a source follower that implements a unity-gain amplifier; and a programmable-gain amplifier coupled to the Sallen-Key filter. The circuit enables programmable gain via adjustment to a current mirror copying ratio in the programmable-gain amplifier, which decouples the bandwidth of the circuit from its gain settings. The programmable-gain amplifier can comprise a differential voltage-to-current converter, a current mirror pair, and programmable output gain stages. The Sallen-Key filter and at least one branch in the programmable-gain amplifier can comprise transistors arranged in identical circuit configurations.

The present disclosure describes variable gain amplifiers with gain-based compensation. In some embodiments, a variable gain amplifier (VGA) includes a gain stage, an output stage, a compensation stage, and a capacitor coupled between respective outputs of the gain stage and compensation stage. A gain of the VGA is configured, based on a gain setting, to amplify signals received by the variable gain amplifier. A gain of the compensation stage is configured, based on the gain setting, to alter an effective capacitance of the capacitor, which is applied to the output of the gain stage for compensation of the VGA. By altering the effective capacitance based on the gain setting of the VGA, compensation capacitance is adjusted continuously with changes in the gain setting and at a similar resolution. In various embodiments, the continuous adjustment of the compensation capacitance across different gain levels prevents discontinuities in amplifier compensation.

A combined resistance circuit 2A includes a first circuitry 20A provided between a first end 2a and a second end 2b. This first circuitry 20A includes a resistor R1 provided between a node N11 and a node N12, a resistor R2 provided between the node N12 and a node N13, a resistor R3 provided between the node N13 and a node N14, a resistor R4 provided between the node N14 and the node N11, a resistor R5 provided between the node N11 and the node N13, a switch SW0 provided in series to the resistor R4 between the node N14 and the node N11, and a switch SW1 provided in series to the resistor R2 between the node N12 and the node N13. The node N12 is connected to the first end and the node N14 is connected to the second end.

Systems, methods and apparatus for efficient power control of an RF amplifier for amplification of a constant envelope RF signal are described. A reduction in a size of a pass device of an LDO regulator is obtained by removing the pass device of the LDO regulator from a main current conduction path of the RF amplifier. Power control is provided by varying one or more gate voltages to cascoded transistors of a transistor stack of the RF amplifier according to a power control voltage. Various configurations for controlling the gate voltages are presented by way of a smaller size LDO regulator or by completely removing the LDO regulator. In a case where a supply voltage to the transistor stack varies, such as in a case of a battery, a compensation circuit is used to adjust the power control voltage in view of a variation of the supply voltage, and therefore null a corresponding drift in output power of the RF amplifier.

A circuit is formed on an SOI. The bias generator is connected to the gates of first and second transistors. In the bias generator, a first variable current source is connected to the power supply circuit via a power supply node. A third transistor is connected between the first variable current source and a ground-voltage source. A gate thereof is connected to the gate of the first transistor. A first operational amplifier controls a gate voltage of the third transistor so that a voltage at a second node between the first variable current source and the third transistor becomes almost equal to a reference-voltage. A first characteristics changer is connected to the gate of the third transistor or a second node, to change at least one loop gain characteristics and phase characteristics of a loop from the first operational amplifier, through the third transistor, to the first variable current source.

In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

The present invention is directed to electrical circuits and techniques thereof. More specifically, an embodiment of the present invention provides a variable gain amplifier that includes a first transistor and a second transistor whose gate terminals are coupled to a first input terminal. A first drain terminal of the first transistor and a first source terminal of the second transistor is coupled to a voltage gain control switch. There are other embodiments as well.

An equalizer, in at least some embodiments, comprises an amplifier configured to produce an amplified voltage signal that is a function of an ambient temperature affecting the equalizer. The equalizer also includes a linear equalizer stage coupled to the amplifier and comprising a transistor having a resistance controlled by the amplified voltage signal. The linear equalizer stage is configured to produce a voltage output signal having a gain that is dependent on the transistor resistance and on a frequency of the amplified voltage signal.

A constant impedance switch dynamically manages switch impedance to eliminate or substantially reduce impedance glitches during switching events by stepping variable impedances through sequences of impedance values. As a result, VSWR may be reduced to or near 1:1, allowing programming and circuitry to be simplified. Switch impedance may be maintained for single and multi-throw switches having variable impedances of any order. Each variable impedance may comprise one or more configurable cells, subcells and elements controlled by thermometer, binary, hybrid or other coding technique.