A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

The present disclosure provides a semiconductor package structure. The semiconductor package structure includes a substrate, a first electronic component and a support component. The first electronic component is disposed on the substrate. The first electronic component has a backside surface facing a first surface of the substrate. The support component is disposed between the backside surface of the first electronic component and the first surface of the substrate. The backside surface of the first electronic component has a first portion connected to the support component and a second portion exposed from the support component.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and the second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film in this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

In examples, a device comprises a semiconductor die, a thin-film layer, and an air cavity positioned between the semiconductor die and the thin-film layer. The air cavity comprises a resonator positioned on the semiconductor die. A rib couples to a surface of the thin-film layer opposite the air cavity.

Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

A MEMS device may include: (i) a lower cavity, including a first island, formed within a first layer of the MEMS device; (ii) an upper cavity, including a second island, formed within a second layer of the MEMS device; (iii) a MEMS resonating element arranged in a device layer of the MEMS device and anchored via the first and second islands; (iv) a first set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an in-plane mode that is arranged in the device layer of the MEMS device; and (v) a second set of electrodes for electrostatic actuation and sensing of the MEMS resonating element in an out-of-plane mode that is electrically isolated from the first set of electrodes and located in the first or second layer of the MEMS device, and wherein the out-of-plane mode is a torsional mode or a saddle mode.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

A method of manufacturing a nanoelectromechanical resonator allows for uniform tuning of a resonant frequency. The nanoelectromechanical resonator can be mass produced and used to sense the presence of a selected gas.

A micromechanical resonator wafer assembly includes an actuator wafer supporting an outer actuator layer. The outer actuator layer includes an oscillating part configured to be driven by an electrical drive signal. The micromechanical resonator wafer assembly further includes a device wafer mounted on top of the actuator wafer. The device wafer includes a plurality of inner actuators. Each of the inner actuators include an oscillation body configured to oscillate about one or more axes. The device wafer is physically connected to the actuator wafer such that each of the inner actuators forms with the outer actuator layer a coupled oscillation system for excitation of the oscillation body of the respective inner actuator. The micromechanical resonator wafer assembly provides external actuation of the oscillation body of each of the inner actuators by use of the outer actuator layer and hence, provides improved scan angles with fast start-up time.