A MEMS (microelectromechanical system) resonator with a material layer of single-crystalline silicon, at least one layer made of material with low thermal diffusivity to reduce thermoelastic dissipations in the MEMS resonator, a layer of piezoelectric material, and a layer made of electrically conducting material. The layer with low thermal diffusivity is between the single-crystalline silicon layer and the piezoelectric layer, or between the piezoelectric layer and the electrically conducting layer. The use of a material layer of low thermal diffusivity.

A method for the batch production of acoustic wave filters comprises: synthesizing N theoretical filters, each filter defined by a set of j theoretical resonator(s) having a triplet C.sub.0ij,eq, .sub.rij,eq and .sub.aij,eq, these parameters grouped into subsets; determining a reference resonator structure for each subset, naturally having a resonant frequency .sub.r,ref, where .sub.aij,eq<.sub.r,ref<.sub.rij,eq; determining, for each theoretical resonator, an elementary building block comprising an intermediate resonator R.sub.ij, a parallel reactance Xp.sub.ij and/or a series reactance Xs.sub.ij, the intermediate resonator R.sub.ij having a triplet C.sub.0ij, .sub.r,ref and .sub.a,ref, the parameters C.sub.0ij, Xpij and/or Xs.sub.ij defined so the elementary building block has a triplet: C.sub.0ij,eq, .sub.rij,eq and .sub.aij,eq; determining the geometrical dimensions of the actual resonators R.sub.ij of the filters so they have a capacitance C.sub.0ij; producing each actual resonator; associating series and/or parallel reactances with actual resonators in order to form the elementary building blocks.

A method of designing an acoustic microwave filter in accordance with frequency response requirements comprises generating a modeled filter circuit design having a plurality of circuit elements comprising an acoustic resonant element defined by an electrical circuit model that comprises a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss. The method further comprises optimizing the modeled filter circuit design to generate an optimized filter circuit design, comparing a frequency response of the optimized filter circuit design to the frequency response requirements, and constructing the acoustic microwave filter from the optimized filter circuit design based on the comparison.

A resonant circuit comprises an input terminal and an output terminal and at least: a group of N resonators, where N1, the resonators having the same resonance frequency and the same antiresonance frequency; a first and a second impedance matching element having a non-zero reactance, the first element being in series with the group of resonators, and the second element being in parallel with the group of resonators, the resonant circuit comprising: first means for controlling the group of resonators, enabling the static capacitance of the group to be fixed at a first value; second control means, enabling the impedance of the first impedance matching element and that of the second element to be fixed at second values; the first and second values being such that the triplet of values composed of the static capacitance of the group, the impedance of the first element, and the impedance of the second element can be used to determine the following triplet of parameters: the characteristic impedance Z.sub.c of the assembly formed by the group, the first impedance matching element and the second matching element; the resonance frequency .sub.r of the assembly; the antiresonance frequency .sub.a of the assembly, in order to stabilize the impedance of the circuit at a chosen characteristic impedance.

A method of designing an acoustic microwave filter in accordance with frequency response requirements comprises generating a modeled filter circuit design having a plurality of circuit elements comprising an acoustic resonant element defined by an electrical circuit model that comprises a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss. The method further comprises optimizing the modeled filter circuit design to generate an optimized filter circuit design, comparing a frequency response of the optimized filter circuit design to the frequency response requirements, and constructing the acoustic microwave filter from the optimized filter circuit design based on the comparison.

A method of designing an acoustic microwave filter in accordance with frequency response requirements comprises generating a modeled filter circuit design having a plurality of circuit elements comprising an acoustic resonant element defined by an electrical circuit model that comprises a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss. The method further comprises optimizing the modeled filter circuit design to generate an optimized filter circuit design, comparing a frequency response of the optimized filter circuit design to the frequency response requirements, and constructing the acoustic microwave filter from the optimized filter circuit design based on the comparison.

An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate.

Apparatus and methods for control of the second order temperature dependence of the frequency of a mechanical resonating structure are described. The second order temperature dependence of frequency of the mechanical resonating structure may be non-linear. Control may be provided by doping of a semiconductor layer of the mechanical resonating structure.

An apparatus comprises a micromechanical system including a semiconductor body. The semiconductor body comprises a first resonator, a second resonator, and a supporting portion. The first resonator is to resonate at a first resonating frequency that is generally frequency-stable over a predetermined temperature range. The second resonator is to resonate at a second resonating frequency that is generally linearly decreasing or increasing as temperature increases over the predetermined temperature range. The supporting portion is to support both the first resonator and the second resonator.

A method comprises: forming a die including a cavity; coupling an anchor to the die; coupling a first resonator to a side of the anchor, in which the first resonator is suspended over the cavity and is operable to bend towards or away from a bottom of the cavity; and coupling a second resonator to the side of the anchor, in which the second resonator is suspended over the cavity, at least a part of the first resonator is laterally between the side of the anchor and a part of the second resonator, and the first resonator is operable to bend in an opposite direction from the second resonator.