A package for an electronic component wherein the package comprises a front end, a back end, and an active membrane layer sandwiched between front and back electrodes of conducting material; the active membrane being mechanically supported by the front end and covered by a back end comprising at least one back cavity having organic walls and lid, with filled through vias traversing the organic lid and walls for coupling to the electrodes by an internal routing layer; the vias being coupleable by external solderable bumps to a circuit board for coupling the package in a flip chip configuration.

A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.

The application relates to the technical field of semiconductors and discloses a method for manufacturing a resonator. The method includes: a substrate is pretreated to form a dielectric layer with a preset thickness; ion implantation treatment is performed to a preset region of the dielectric layer; the dielectric layer subjected to the ion implantation treatment is etched or corroded to form a sacrificial material part, the sacrificial material part having a plane top surface and a vertical section of a bridge structure; a multilayer structure is formed on the substrate on which the sacrificial material part has been formed, the multilayer structure successively including a lower electrode layer, a piezoelectric layer and an upper electrode layer from bottom to top; and the sacrificial material part is removed.

A fine dust concentration sensor includes a bulk acoustic resonator and a cap including an upper portion with holes therein and a lateral portion connected to the upper portion to accommodate the bulk acoustic resonator. An upper surface of the upper portion of the cap is coated with a hydrophobic material.

A BAW resonator/filter with a monolithic TFE package that defines an acoustic BC and suppresses resonances from the low-Q piezoelectric area of the resonator and resulting devices are provided. Embodiments include a BAW resonator over a dielectric layer, the BAW resonator including a first metal layer, a thin-film piezoelectric layer, and a second metal layer; a first cavity in the dielectric layer under the first metal layer and a second cavity over the first cavity on the second metal layer; and a pair of TFE anchors on the second metal layer, each TFE anchor adjacent to and on an opposite side of the second cavity and extending beyond the first metal layer.

Disclosed are a film bulk acoustic resonator and a manufacturing method therefor. The film bulk acoustic resonator includes: a substrate, a buffer layer, a first electrode layer, a piezoelectric layer, a second electrode layer stacked in sequence, and a cavity structure arranged between the substrate and the first electrode layer and at least partially located in the buffer layer, where the first electrode layer includes an N-type semiconductor. The N-type semiconductor has an integrated structure and may be used as an electrode, so that the cavity structure at least partially located in the buffer layer may be formed first, and then the N-type semiconductor is arranged on the cavity structure. Thus, there is no need to etch sacrificial materials to form the cavity structure, thereby reducing probability of device reliability deterioration due to etching sacrificial materials.

An acoustic wave device includes a first substrate, a piezoelectric layer adjacent to a first principal surface of the first substrate, a functional electrode on the piezoelectric layer, a second substrate, and a third substrate. The second substrate is adjacent to the first principal surface of the first substrate and faces the first substrate, with a second hollow interposed therebetween. The third substrate is adjacent to a second principal surface of the first substrate and faces the first substrate, with a first hollow interposed therebetween. The acoustic wave device includes a first support portion between the first principal surface of the first substrate and the second substrate, and a second support portion between the first substrate and the third substrate.

An aluminum nitride film contains a Group IV element and a Group II or Group XII element, and an atomic composition ratio of the Group II or Group XII element to the Group IV element is less than 1.

An acoustic wave device includes: a first substrate having a first surface and a side surface; an acoustic wave resonator located on the first surface of the first substrate; and a first insulator film that covers the acoustic wave resonator and is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate.

Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.