An acoustic resonator includes: a resonating unit including a resonating unit including a piezoelectric layer and first and second electrodes disposed on a lower side and an upper side of the piezoelectric layer, respectively; a substrate disposed on a lower side of the resonating unit; a support unit providing a cavity between the substrate and the resonating unit; and an intermediate metal layer separated from the second electrode and disposed in the resonating unit such that at least a portion thereof is surrounded by the piezoelectric layer and the second electrode.

A method for manufacturing a semiconductor apparatus includes: on a base substrate, forming an isolation trench layer, a first dielectric layer, a lower electrode layer and a second dielectric layer; forming a piezoelectric film and an upper electrode layer in an opening in the second dielectric layer; forming a third dielectric layer; forming a first cavity in the third dielectric layer to expose at least part of the upper electrode layer; bonding a first assistant substrate to seal the first cavity; removing a part of the base substrate to expose the isolation trench layer; forming a fourth dielectric layer on a side of the isolation trench; and etching through the fourth dielectric layer, the isolation trench layer, the first dielectric layer to form a second cavity beneath the lower electrode layer, plan views of the first and second cavities providing an overlapped region having a polygon shape without parallel sides.

An acoustic wave resonator includes: a substrate; a resonating portion formed on a first surface of the substrate; a metal pad connected to the resonating portion through a via hole formed in the substrate; and a protective layer disposed on a second surface of the substrate and including a plurality of layers, wherein the plurality of layers includes an internal protective layer directly in contact with the second surface of the substrate and formed of an insulating material including an adhesion that is stronger than an adhesion of other layers, among the plurality of layers.

An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.

Bulk acoustic wave (BAW) resonators having convex surfaces, and methods of forming the same are disclosed. An example BAW resonator includes a first electrode, a piezoelectric layer formed on the first electrode, the piezoelectric layer having a convex surface, and a second electrode formed on the convex surface. An example integrated circuit (IC) package includes a BAW resonator disposed in the IC package, the BAW resonator including a piezoelectric layer having a convex surface.

In fabricating a semiconductor device, a shared material is formed in a resonator region of the semiconductor device and in a phase-change material (PCM) switch region of the semiconductor device. A portion of the shared material is removed to concurrently form a heat spreader comprising the shared material in the PCM switch region and a piezoelectric segment comprising the shared material in the resonator region. The piezoelectric segment in the resonator region and the heat spreader in the PCM switch region are situated at substantially the same level in the semiconductor device. The PCM switch region includes a heating element between the heat spreader and a PCM. The resonator region includes the piezoelectric segment between two electrodes.

A method for manufacturing a semiconductor apparatus includes: on a base substrate, forming an isolation trench layer, a first dielectric layer, a first metal connecting layer, a piezoelectric film, and an upper electrode layer; forming an acoustic resonance film by patternizing the piezoelectric film, the upper electrode layer, and the first metal connecting layer; above the base substrate, forming a second dielectric layer and a third dielectric layer; forming a first cavity through the third and second dielectric layers, and the protection layer; removing a part of the base substrate to expose the isolation trench layer; forming a fourth dielectric layer under the isolation trench layer; and forming a second cavity through the fourth dielectric layer, the isolation trench layer, and the first dielectric layer, plan views of the first and second cavities forming an overlapped region having a polygon shape without parallel sides.

A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.

A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.

An acoustic resonator comprises a substrate, a resonant portion disposed on the substrate and in which a first electrode, a piezoelectric layer, and a second electrode are stacked, a protective layer disposed on an upper portion of the resonant portion, and a hydrophobic layer formed on the protective layer, and the protective layer comprises a first protective layer stacked on the second electrode and a second protective layer stacked on the first protective layer, wherein a density of the second protective layer is higher than a density of the first protective layer.