An acoustic wave device includes an insulating layer including a recess, a piezoelectric layer on the insulating layer and over the recess to define a cavity, a first excitation electrode on a first surface of the piezoelectric layer opposite to the cavity, a second excitation electrode on a second surface of the piezoelectric layer and within the cavity, a dielectric layer on the first excitation electrode, and a first frame on the second excitation electrode and within the cavity.

An acoustic wave device includes an insulating layer and a piezoelectric layer defining a cavity, a first excitation electrode on a first surface of the piezoelectric layer opposite to the cavity, a second excitation electrode on a second surface of piezoelectric layer and within the cavity, a wiring electrode on the piezoelectric layer and connected to the first excitation electrode, a lid, a conductive wall extending between a first portion of the wiring electrode and the lid, and a sealing frame extending between a second portion of the wiring electrode and the lid. A first width of a first portion of the sealing frame is larger than a second width of a second portion of the sealing frame. A third width of the second portion of the wiring electrode is smaller than the first width and is larger than the second width.

A package for an electronic component, the package comprising a front end, a back end, and an active membrane layer sandwiched between front and back electrodes of conducting material; wherein front electrode has a surface that extends beyond an adjacent surface of the active membrane layer, the active membrane mechanically supported by the front end and covered by a back end comprising at least one back cavity having organic walls and lid of organic material, with filled through vias traversing the organic walls and lid for coupling to the electrodes by an internal routing layer; the vias being coupleable by external solderable bumps to a circuit board for coupling the package in a flip chip configuration.

A method of marking information on a substrate for use in a semiconductor component is provided. The method comprises providing a substrate for use in a semiconductor component, providing a metal layer on a surface of the substrate, and providing a marking within the metal layer. A method of making a die, a radio-frequency module and a wireless mobile device; as well as a substrate, a die, a radio-frequency module and a wireless mobile device is also provided.

An acoustic resonator device includes a substrate having a surface and a piezoelectric plate having front and back surfaces, with the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. Stripes of a dielectric material formed over the plate in gaps between ends of the interleaved fingers and opposing busbars of the IDT.

The present disclosure provides a packaging module and packaging method of a BAW resonator. The packaging method includes: bonding a BAW resonant device including a first substrate and a resonant structure provided on the first substrate to a second substrate through a bonding layer; forming through holes exposing corresponding electrical connection portions of the resonant structure at a side of the first substrate; and forming a conductive interconnection layer on inner surfaces of the through holes and on a portion of a surface of the first substrate to avoid steps of etching through holes and depositing conductive materials from the bonding layer, so that a material of the bonding layer can be selected to provide good bonding effect, which helps to reduce the process difficulty, and improves the stability of the through holes and the formed packaging module, thereby improving the performance of the BAW resonator packaging structure.

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator. The acoustic reflector may include a patterned layer.

A film bulk acoustic resonator (FBAR) structure includes a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including a single crystalline piezoelectric material, a bottom electrode disposed below the piezoelectric layer; a top electrode disposed above the piezoelectric layer; and a cavity disposed below the bottom electrode.

A bulk acoustic wave resonator and manufacturing method thereof and filter, the bulk acoustic wave resonator includes: a resonant body structure, and a carrier structure and a cover structure on two opposite sides of the resonant body structure; a first cavity is between the carrier structure and the resonant body structure; the cover structure includes a cover substrate, and a cover bonding layer, a second cavity is between the cover structure and the resonant body structure; first and second conductive connectors, and a pad layer are on opposite sides of the resonant body structure, and the pad layer includes one or more bonding pads bonded with the cover bonding layer, each bonding pad has a recess recessed toward the resonant body structure, and the cover bonding layer includes a protrusion part filling the recess and surrounded by the bonding pad.

An acoustic resonator device is provided that includes a substrate having a surface; a piezoelectric layer attached to the surface of the substrate via an intermediate layer, the piezoelectric layer including a portion that is over a cavity in the intermediate layer; a conductor pattern including an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on the piezoelectric layer; a dielectric layer at least between the interleaved fingers of the IDT; and a dielectric cover over the IDT and the piezoelectric layer, the dielectric cover including a bottom surface, wherein at least a portion of the dielectric cover is attached to a portion of the conductor pattern, wherein the conductor pattern includes at least two metal layers including a first metal layer of the interleaved fingers of the IDT and a second metal layer attached to the dielectric cover.