An acoustic wave device assembly is disclosed. The acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that has a first portion embedded in the first piezoelectric layer and a second portion disposed over a surface of the first piezoelectric layer. The acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.

A method of marking information on a substrate for use in a semiconductor component is provided. The method comprises providing a substrate for use in a semiconductor component, providing a metal layer on a surface of the substrate, and providing a marking within the metal layer. A method of making a die, a radio-frequency module and a wireless mobile device; as well as a substrate, a die, a radio-frequency module and a wireless mobile device is also provided.

A method for forming a bulk acoustic wave resonance device is provided, includes: forming a first stack, and said forming the first stack includes providing a first substrate; forming a piezoelectric layer on the first substrate; forming a first electrode layer on the piezoelectric layer; forming a cavity preprocessing layer on the piezoelectric layer, and a cavity is to be formed based on the cavity preprocessing layer, the cavity preprocessing layer at least covers a first end of the first electrode layer, and the cavity preprocessing layer is in contact with the piezoelectric layer, a first side of the first stack corresponds to a side of the first substrate, and a second side of the first stack corresponds to a side of the cavity preprocessing layer; forming a second stack, and said forming the second stack includes providing a second substrate; joining the first stack and the second stack, and the second stack is disposed at the second side; removing the first substrate, and the first side corresponds to a side of the piezoelectric layer; forming a second electrode layer at the first side, and the second electrode layer is in contact with the piezoelectric layer; and removing the second stack.

A thin film piezoelectric acoustic wave resonator and a manufacturing method therefor, and a filter. The film piezoelectric acoustic wave resonator includes: a first base, a first electrode, a piezoelectric plate body, a second electrode and an isolation cavity, wherein the first electrode, the piezoelectric plate body and the second electrode are arranged on a first surface of the first base and are stacked sequentially from top to bottom; the first electrode, the piezoelectric plate body and the second electrode are provided with an overlapping region in a direction perpendicular to the surface of the piezoelectric plate body; in the overlapping region, a gap is formed between the piezoelectric plate body and the first electrode; the isolation cavity surrounds the periphery of the piezoelectric plate body; and the gap communicates with the isolation cavity.

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

A bulk acoustic wave resonator includes a substrate, a support layer disposed on the substrate, the support layer including a cavity having a polygon shape with more than three sides in a plane crossing a first direction from the substrate to the support layer, a piezoelectric layer disposed on the support layer, a bottom electrode disposed below the piezoelectric layer, partially overlapping the cavity, and extending across a first side of the cavity, and a top electrode disposed above the piezoelectric layer, partially overlapping the cavity, and extending across a second side of the cavity. The bulk acoustic wave resonator further includes at least one release hole formed in the piezoelectric layer and overlapping a portion of the cavity.

A BAW resonator includes: a piezoelectric film array, including multiple piezoelectric films between a substrate of a chip and a capping layer on the top, where multiple first cavities are provided between adjacent piezoelectric films in a vertical direction, between the piezoelectric films and the capping layer, and between the piezoelectric films and the substrate, second cavities are shared between adjacent piezoelectric films in a first direction in a horizontal plane, and third cavities are shared between adjacent piezoelectric films in a second direction in the horizontal plane; multiple electrode layers, covering at least the top surface and bottom surface of each of the piezoelectric films; and multiple electrode interconnection layers, connected to the electrode layers on the bottom surfaces of the piezoelectric films along sidewalls of the third cavities.

An RF filter system including a plurality of BAW resonators arranged in a circuit, the circuit including a serial configuration of resonators and a parallel shunt configuration of resonators, the circuit having a circuit response corresponding to the serial configuration and the parallel configuration of the plurality of bulk acoustic wave resonators including a transmission loss from a pass band having a bandwidth from 5.170 GHz to 5.835 GHz. Resonators include a support member with a multilayer reflector structure; a first electrode including tungsten; a piezoelectric film including aluminum scandium nitride; a second electrode including tungsten; and a passivation layer including silicon nitride. At least one resonator includes at least a portion of the first electrode located within a cavity region defined by a surface of the support member.

Provided is a method of manufacturing a bulk acoustic wave resonator, which includes: providing a piezoelectric substrate for forming a piezoelectric layer; forming a first electrode structure on the portion of the piezoelectric substrate for forming the piezoelectric layer; forming a dielectric layer on the first electrode structure, and performing a patterning process on the dielectric layer to form a patterned dielectric layer comprising a sacrificial dielectric part and a periphery dielectric part; forming a boundary layer on the patterned dielectric layer, the boundary layer covering a surface of the patterned dielectric layer and surrounding the sacrificial dielectric part; thinning the piezoelectric substrate to form the piezoelectric layer, the first electrode structure being located at a first side of the piezoelectric layer; forming a second electrode structure on a second side of the piezoelectric layer; and removing the sacrificial dielectric part to form a resonant cavity.

An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.