A crystal controlled oscillator includes a crystal unit, an integrated circuit, and an insulating resin. The crystal unit contains a crystal vibrating piece resonating at a predetermined frequency. The integrated circuit places the crystal unit. The integrated circuit includes an oscillator circuit oscillating the crystal vibrating piece. The insulating resin is formed to cover the crystal unit on the integrated circuit.

A rectangular quartz crystal blank having long sides substantially parallel to a Z axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a center region, a second region and a third region that are adjacent to the center region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than a thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than a thickness of the first region, and 16.21W/T17.71, where W is a length of a short side and T is a thickness.

A rectangular quartz crystal blank having long sides substantially parallel to a Z axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a center region, a second region and a third region that are adjacent to the center region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than a thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than a thickness of the first region, and 25.90W/T27.17, where W is a length of a short side and T is a thickness.

A rectangular quartz crystal blank having long sides substantially parallel to a Z axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a center region, a second region and a third region that are adjacent to the center region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than a thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than a thickness of the first region, and 20.78W/T22.10, where W is a length of a short side and T is a thickness.

A rectangular quartz crystal blank having long sides substantially parallel to a Z axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a center region, a second region and a third region that are adjacent to the center region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than a thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than a thickness of the first region, and 25.93W/T27.07, where W is a length of a short side and T is a thickness.

A piezoelectric vibrating device according to the present invention is provided with: a piezoelectric vibration plate having first and second driving electrodes respectively formed on main surfaces on both sides thereof, the piezoelectric vibration plate further having first and second mounting terminals that are respectively connected to the first and second driving electrodes. The piezoelectric vibrating device is also provided with first and second sealing members respectively joined to the main surfaces on both sides of the piezoelectric vibration plate in a manner that the first and second driving electrodes of the piezoelectric vibration plate are covered with these sealing members. At least one of the first and second sealing members includes a film made of a resin.

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

An electronic component that includes an electronic element; a base member having an upper surface on which the electronic element is mounted; and a lid member bonded to the base member via a bonding member such that the electronic element is hermetically sealed therebetween. The bonding member is made of an insulating material containing a first metal. The lid member has an outermost layer formed on at least a surface of the lid member facing the base member. The outermost layer of the lid member has a solid solution layer of the first metal and a second metal at at least a portion of the outermost layer.

High-yield fabrication methods are provided for making quartz resonators having thicknesses ranging from one micrometer to several hundred micrometers and thus covering the frequency range from HF to UHF. Plasma dry etching is used to form arbitrary resonator geometries. The quartz resonator structure and the through-quartz vias are formed concurrently. The method includes bonding a quartz device wafer to a quartz handle wafer with a temporary adhesive. Mesa structures formed by plasma dry etching enable the resonators to achieve high-Q operation with energy trapping/mode confinement. A thermo-compression bond integrates the quartz resonators to a host wafer (e.g., an oscillator ASIC) to form oscillators. Silicon cap wafers are bonded over the resonators to the ASIC to provide wafer scale hermetic encapsulation of the quartz oscillators.

A piezoelectric device is provided and includes: a piezoelectric vibrating piece, having an outer shape in rectangular shape and including an excitation electrode formed on both principal surfaces which are a top surface and a lower surface, an electrode pad formed at both ends of one short side, and an extraction electrode extracted from the excitation electrode to the electrode pad to be electrically connected to the electrode pad; a package, including a placement surface on which the piezoelectric vibrating piece is placed as opposed to the lower surface of the piezoelectric vibrating piece, and an adhesion pad formed on the placement surface; and a conductive adhesive, securing the piezoelectric vibrating piece to the package and electrically connecting the adhesion pad to the electrode pad. An adhesive is applied on the top surface of the piezoelectric vibrating piece and between the conductive adhesive and the excitation electrode.