H03H2003/023

Filter using transversely-excited film bulk acoustic resonators with divided frequency-setting dielectric layers

Methods of fabricating acoustic filters. A back-side frequency setting layer is formed on a surface of a substrate and/or a back surface of a piezoelectric plate. The piezoelectric plate is attached to the substrate with the back-side frequency setting layer sandwiched between the substrate and the piezoelectric plate. Portions of the piezoelectric plate and backside frequency setting layer form diaphragms spanning respective cavities in the substrate. A conductor pattern defining a plurality of acoustic resonators is formed on a front surface of the piezoelectric plate. Each of the acoustic resonators includes an interdigital transducer (IDT) with interleaved fingers disposed on a respective diaphragm. A front-side frequency setting layer is formed over the interleaved fingers and the front surface of the diaphragms of one or more shunt resonators. The back-side frequency setting layer is removed from the back surfaces of the diaphragms of one or more series resonators.

Front end modules for 5.6 GHz and 6.6 GHz Wi-Fi acoustic wave resonator RF filter circuits

A front end module (FEM) for a 5.6/6.6 GHz Wi-Fi acoustic wave resonator RF filter circuit. The device can include a power amplifier (PA), a 5.6/6.6 GHz resonator, and a diversity switch. The device can further include a low noise amplifier (LNA). The PA is electrically coupled to an input node and can be configured to a DC power detector or an RF power detector. The resonator can be configured between the PA and the diversity switch, or between the diversity switch and an antenna. The LNA may be configured to the diversity switch or be electrically isolated from the switch. Another 5.6/6.6 GHZ resonator may be configured between the diversity switch and the LNA. In a specific example, this device integrates a 5.6/6.6 GHz PA, a 5.6/6.6 GHZ bulk acoustic wave (BAW) RF filter, a single pole two throw (SP2T) switch, and a bypassable LNA into a single device.

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH LOW THERMAL IMPEDANCE
20220149808 · 2022-05-12 ·

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on the diaphragm. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the device to provide lower thermal resistance between the IDT and the substrate.

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH LOW THERMAL IMPEDANCE
20220149809 · 2022-05-12 ·

An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer (IDT) formed on the front surface of the plate has interleaved fingers disposed on a diaphragm of the plate that is formed over a cavity in the substrate. The piezoelectric plate and the BOX layer are removed from a least a portion of the surface area of the substrate to provide lower thermal resistance between the IDT and the substrate.

ACOUSTIC WAVE DEVICE

An acoustic wave device is provided that includes a piezoelectric layer including lithium niobate or lithium tantalate, and a series arm resonator and a parallel arm resonator that each include at least a pair of a first electrode and a second electrode on the piezoelectric layer. The acoustic wave device uses a bulk wave in a first thickness-shear mode. Moreover, a film thickness of a first portion of the piezoelectric layer in the series arm resonator is different from a film thickness of a second portion of the piezoelectric layer in the parallel arm resonator. In each of the series arm resonator and the parallel arm resonator, assuming a film thickness of the piezoelectric layer is d and a distance between centers of the first electrode and the second electrode adjacent to each other is p, a ratio d/p is less than or equal to about 0.5.

SOLIDLY-MOUNTED TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH RECESSED INTERDIGITAL TRANSDUCER FINGERS
20230261632 · 2023-08-17 ·

An acoustic resonator is provided that includes a substrate; an acoustic Bragg reflector supported by the substrate; a piezoelectric plate above the acoustic Bragg reflector and opposite the substrate, the piezoelectric plate having at least one groove extending into a surface thereof; and an interdigital transducer (IDT) having a plurality of interleaved fingers with at least one finger is disposed in the at least one groove of the piezoelectric plate, respectively.

TUNING ACOUSTIC RESONATORS WITH BACK-SIDE COATING
20230261626 · 2023-08-17 ·

A filter device is provided that includes a substrate and a piezoelectric plate attached to the substrate. A conductor pattern is formed at a first surface of the piezoelectric plate and includes interdigital transducers of series and shunt resonators that each have interleaved fingers at respective diaphragms of the plate suspended. A first dielectric coating layer is formed over the interleaved fingers of the IDTs and on the first surface of the piezoelectric plate; and a second dielectric coating layer is formed on the second surface of the piezoelectric plate that is opposite the first surface. The second dielectric coating layer of the shunt resonator has a greater thickness than a thickness of the at least one second dielectric coating layer of the series resonator.

Filter using lithium niobate and lithium tantalate transversely-excited film bulk acoustic resonators
11329628 · 2022-05-10 · ·

Acoustic filters are disclosed. A bandpass filter has a passband between a lower band edge and an upper band edge. The bandpass filter includes a plurality of transversely-excited film bulk acoustic resonators (XBARs) connected in a ladder filter circuit. The plurality of XBARs includes at least one lithium tantalate XBAR and at least one lithium niobate XBAR.

TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH SPIRAL INTERDIGITATED TRANSDUCER FINGERS
20220140801 · 2022-05-05 ·

Acoustic resonator devices, filers, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a front surface of the piezoelectric plate includes interleaved interdigital transducer (IDT) fingers connected alternately to first and second busbars. The interleaved IDT fingers are on the diaphragm, and the interleaved IDT fingers include at least a first pair of interleaved spiral IDT fingers.

Transversely-excited film bulk acoustic resonator using pre-formed cavities
11728785 · 2023-08-15 · ·

Acoustic resonator devices, filter devices, and methods of making acoustic resonator devices and filter devices. An acoustic resonator device includes a substrate with a cavity and an alignment pattern in a surface of the substrate. The cavity and the alignment pattern have a same depth. A back surface of a piezoelectric plate is attached to the surface of the substrate. A portion of the piezoelectric plate that spans the cavity forms a diaphragm. An interdigital transducer (IDT) is on a front surface of the piezoelectric plate. Interleaved fingers of the IDT are on the diaphragm.