A substrate structure for an acoustic resonator device. The substrate has a substrate member comprising a plurality of support members configured to form an array structure. In an example, the substrate member has an upper region, and optionally, has a plurality of recessed regions configured by the support members. The substrate has a thickness of single crystal piezo material formed overlying the upper region. In an example, the thickness of single crystal piezo material has a first surface region and a second surface region opposite of the first surface region.

A method of wafer scale packaging acoustic resonator devices and an apparatus therefor. The method including providing a partially completed semiconductor substrate comprising a plurality of single crystal acoustic resonator devices provided on a silicon and carbide bearing material, each having a first electrode member, a second electrode member, and an overlying passivation material. At least one of the devices to be configured with an external connection, a repassivation material overlying the passivation material, an under metal material overlying the repassivation material. Copper pillar interconnect structures are then configured overlying the electrode members, and solder bump structures are form overlying the copper pillar interconnect structures.

A bulk-acoustic wave resonator includes: a membrane layer disposed on a substrate and forming a cavity; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer, and including a frame part disposed at an edge of an active area and having a thickness greater than that of a portion of the upper electrode disposed in a central portion of the active area; and a frequency adjusting layer disposed on the piezoelectric layer and the upper electrode. The frequency adjusting layer is excluded from an inclined surface of the frame part, or a thickness of a portion of the frequency adjusting layer on the inclined surface is less than that of other portions of the frequency adjusting layer. The frequency adjusting layer is disposed on a portion of the piezoelectric layer protruding from the upper electrode.

A bulk acoustic resonator is provided that includes a substrate including a plurality of materials and a cavity disposed therein; a piezoelectric layer attached to the substrate by a first dielectric layer; an interdigital transducer (IDT) on a surface of the piezoelectric layer and having interleaved fingers on a portion of the piezoelectric layer that is over the cavity; and a second dielectric layer disposed over and between the interleaved fingers,

An acoustic filter device includes a transversely-excited film bulk acoustic resonator (XBAR) including a plurality of sub-resonators, and conductors connecting the plurality of sub-resonators in series between a first node and a second node. At least one of the conductors connects two of the plurality of sub-resonators and has a shape that minimizes an area of the at least one conductor.

Tiled filters are disclosed. A filter includes an nm array of sub-filters, where n is a number of sub-filters in parallel and m is a number of sub-filters in series. n and m are non-zero positive integers and at least one of n and m is greater than one. All of the nm sub-filters are bandpass filters with substantially the same passbands.

Acoustic filters are disclosed. A substrate includes a base and an intermediate layer. A piezoelectric plate is attached to the intermediate layer, portions of the piezoelectric plate forming one or more diaphragms spanning respective cavities in the intermediate layer. A conductor pattern on a front surface of the piezoelectric plate includes interdigital transducers (IDTs) of a plurality of resonators, interleaved fingers of each of the IDTs disposed on a respective diaphragm of the one or more diaphragms. A first frequency setting dielectric layer having a first thickness is disposed over the fingers of the IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the fingers of the IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.

An acoustic resonator is provided that includes a piezoelectric plate and an interdigital transducer (IDT) including interleaved fingers on the piezoelectric plate. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic resonator further includes a front-side dielectric layer on the piezoelectric plate between the fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the front-side dielectric layer.

There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers comprise a first layer adjacent the diaphragm and a second layer over the first layer opposite the diaphragm.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces. The substrate includes a silicon base having a trap-rich region adjacent to a surface and a dielectric layer on the surface. The back surface of the piezoelectric plate faces the dielectric layer. The piezoelectric plate comprises a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is provided on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are on the diaphragm.