Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal lithium niobate (LN) plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the LN plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the LN plate such that interleaved fingers of the IDT are disposed on the diaphragm. A half-lambda dielectric layer is formed on one of the front surface and back surface of the diaphragm. Euler angles of the LN plate are [0, , 0], where 2025.

In a method of manufacturing a piezoelectric device in which a piezoelectric thin film on which functional conductors are formed is fixed to a support substrate by a fixing layer, an alignment mark is formed on one main surface of a light-transmitting piezoelectric substrate. A sacrificial layer is formed on a main surface of the piezoelectric substrate with reference to the alignment mark and the fixing layer is formed so as to cover the sacrificial layer and is bonded to the support substrate. The piezoelectric thin film is formed by being separated from the piezoelectric substrate and the functional conductors are formed on the surface of the piezoelectric thin film with reference to the alignment mark. The piezoelectric device is able to be manufactured while positions of formation regions of conductors are adjusted efficiently.

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

A method is provided for fabricating a bulk acoustic wave (BAW) resonator device. The method includes forming an etch stop layer over a bottom electrode and a substrate; forming a dielectric layer on the etch stop layer; forming a photomask over the dielectric layer defining an opening over the bottom electrode; etching a portion the dielectric layer through the opening of the photomask to the etch stop layer to create a corresponding opening in the dielectric layer; removing the photomask, leaving un-etched protruding portions of the dielectric layer around the opening in the dielectric layer; and removing the protruding portions of the dielectric layer, a portion of the etch stop layer located over the bottom electrode, and a minimal portion of the bottom electrode to provide a planarized surface including a top surface of the bottom electrode and an adjacent top surface of the dielectric layer deposited over the substrate.

A bandpass filter is provided that includes a ladder filter circuit with at least one shunt transversely-excited film bulk acoustic resonators (XBAR) and at least one series XBAR. Each of the XBARs includes a diaphragm having an LN-equivalent thickness greater than or equal to 360 nm, and each of the XBARs includes a diaphragm having an LN-equivalent thickness less than or equal to 375 nm.

A filter device is provided that includes a substrate; a piezoelectric layer coupled to the substrate either directly or via one or more intermediate layers; a first interdigital transducer (IDT) of a first bulk acoustic resonator device on the piezoelectric layer and having interleaved fingers over a first cavity the first bulk acoustic resonator device; a second IDT of a second bulk acoustic resonator device on the piezoelectric layer and having interleaved fingers over a second cavity of the second bulk acoustic resonator device; a first dielectric layer having a first thickness disposed between the interleaved fingers of the first IDT; and a second dielectric layer having a second thickness disposed between the interleaved fingers of the second IDT. The first thickness is greater than the second thickness.

An acoustic resonator is fabricated with a substrate having a substrate top surface and a piezoelectric plate having plate front and plate back surfaces. An acoustic Bragg reflector is sandwiched between the substrate top surface and the plate back surface. The reflector has a cavity with a top surface perimeter, and the acoustic Bragg reflector is configured to reflect shear acoustic waves at a resonance frequency of the acoustic resonator. The back surface is mounted on the cavity top surface perimeter except for a portion of the plate forming a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the plate front surface such that interleaved fingers of the IDT are disposed on the diaphragm. Two or more layers of the acoustic Bragg reflector form pedestals that support the back surface of the plate opposite some or all interleaved fingers of the IDT.

A filter device is provided that includes a substrate having a surface; and a piezoelectric layer over a first cavity and a second cavity. The piezoelectric layer is attached to the surface of the substrate either directly or via one or more intermediate layers. An area of the piezoelectric layer has a first thickness for at least one first resonator that forms at least one first membrane over the first cavity. Moreover, an area of the piezoelectric layer has a second thickness for at least one second resonator that forms at least one second membrane over the second cavity, the second thickness being thinner than the first thickness. A bottom of the first cavity that is opposite from the at least one first membrane extends farther down away from the piezoelectric layer than a bottom of the second cavity that is opposite from the at least one second membrane.