Patent classifications
H03H2003/023
Transversely-excited film bulk acoustic resonators with three-layer electrodes
There is disclosed acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm. The interleaved fingers comprise a first layer proximate the diaphragm, a second layer over the first layer, and a third layer over the second layer, wherein adjacent layers are different materials.
Filter using transversely-excited film bulk acoustic resonators with multiple frequency setting layers
Acoustic filters are disclosed. A filter device includes a plurality of resonators connected in a ladder filter circuit, each resonator of the plurality of resonators comprising an interdigital transducer (IDT) with interleaved fingers disposed on a respective piezoelectric diaphragm. A first frequency setting dielectric layer having a first thickness is disposed over the interleaved fingers of one or more IDTs of a first subset of the plurality of resonators. A second frequency setting dielectric layer having a second thickness greater than the first thickness is disposed over the interleaved fingers of one or more IDTs of a second subset of the plurality of resonators, wherein the first subset and the second subset are not identical.
TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH BURIED OXIDE STRIP ACOUSTIC CONFINEMENT STRUCTURES
A filter device is provided that includes a plurality of bulk acoustic resonators that each includes a piezoelectric layer; a conductor pattern on the piezoelectric layer and including an interdigital transducer (IDT) having a first plurality of fingers extending from a first busbar and a second plurality of fingers extending from the second busbar, such that the first plurality of fingers and the second plurality of fingers are interleaved with each other; a dielectric strip that overlaps a margin of the first plurality of fingers and that extends into a gap between ends of the first plurality of fingers and the second busbar. Moreover, a thickness ts of the dielectric strip a first bulk acoustic resonator of the plurality of bulk acoustic resonators is different than a thickness ts of the dielectric strip of a second bulk acoustic resonator of the plurality of bulk acoustic resonators.
Multi-port filter using transversely-excited film bulk acoustic resonators
Filter devices and methods are disclosed. A single-crystal piezoelectric plate is attached to substrate, portions of the piezoelectric plate forming a plurality of diaphragms spanning respective cavities in the substrate. A conductor pattern formed on the piezoelectric plate defines a low band filter including low band shunt resonators and low band series resonators and a high band filter including high band shunt resonators and high band series resonators. Interleaved fingers of interdigital transducers (IDTs) of the low band shunt resonators are disposed on respective diaphragms having a first thickness, interleaved fingers of IDTs of the high band series resonators are disposed on respective diaphragms having a second thickness less than the first thickness, and interleaved fingers of IDTs of the low band series resonators and the high band shunt resonators are disposed on respective diaphragms having thicknesses intermediate the first thickness and the second thickness.
5.1-7.1GHz Wi-Fi6E coexistence acoustic wave resonator RF diplexer circuit
An RF diplexer circuit device using modified lattice, lattice, and ladder circuit topologies. The diplexer can include a pair of filter circuits, each with a plurality of series resonator devices and shunt resonator devices. In the ladder topology, the series resonator devices are connected in series while shunt resonator devices are coupled in parallel to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a plurality of series resonator devices, and a pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. A multiplexing device or inductor device can be configured to select between the signals coming through the first and second filter circuits.
Transversely-excited film bulk acoustic resonator with buried oxide strip acoustic confinement structures
Acoustic resonators, filters, and methods. An acoustic resonator includes a substrate, a piezoelectric plate, and a diaphragm including a portion of the piezoelectric plate spanning a cavity in a substrate. An interdigital transducer (IDT) on a front surface of the piezoelectric plate includes first and second sets of interleaved interdigital transducer (IDT) fingers extending from first and second busbars respectively. The interleaved IDT fingers extend onto the diaphragm. Overlapping portions of the interleaved IDT fingers define an aperture of the acoustic resonator. First and second dielectric strips are on the front surface of the piezoelectric plate. Each dielectric strip has a first portion under the IDT fingers in a respective margin of the aperture and a second portion extending into a gap between the respective margin and the respective busbar.
Transversely-excited film bulk acoustic resonator with buried oxide strip acoustic confinement structures
Acoustic resonators, filters, and methods. An acoustic resonator includes a substrate, a piezoelectric plate, and a diaphragm including a portion of the piezoelectric plate spanning a cavity in a substrate. An interdigital transducer (IDT) on a front surface of the piezoelectric plate includes first and second sets of interleaved interdigital transducer (IDT) fingers extending from first and second busbars respectively. The interleaved IDT fingers extend onto the diaphragm. Overlapping portions of the interleaved IDT fingers define an aperture of the acoustic resonator. First and second dielectric strips are on the front surface of the piezoelectric plate. Each dielectric strip has a first portion under the IDT fingers in a respective margin of the aperture and a second portion extending into a gap between the respective margin and the respective busbar.
Transversely-excited film bulk acoustic resonators with electrodes having a second layer of variable width
There is disclosed acoustic resonators and filter devices. An acoustic resonator device includes a piezoelectric plate, and an interdigital transducer (IDT) formed on a front surface of the piezoelectric plate. The IDT includes interleaved fingers. At least one of the interleaved fingers includes a first layer adjacent the piezoelectric plate and a second layer over the first layer, wherein a width of the first layer is constant, and wherein a width of the second layer varies along a length of the at least one interleaved finger.
Small transversely-excited film bulk acoustic resonators with enhanced Q-factor
An acoustic resonator device includes a conductor pattern formed on a surface of a piezoelectric plate. The conductor pattern includes a first busbar, a second busbar, and n interleaved parallel fingers of an interdigital transducer (IDT), where n is a positive integer. The fingers extend alternately from the first and second busbars. A first finger and an n'th finger are at opposing ends of the IDT. The conductor pattern also includes a first reflector element proximate and parallel to the first finger and a second reflector element proximate and parallel to the n'th finger. A center-to-center distance pr between the first reflector element and the first finger and between the second reflector element and the n'th finger is greater than or equal to 1.2 times a pitch p of the IDT and less than or equal to 1.5 times the pitch p.
Filter using transversely-excited film bulk acoustic resonators
A 5 GHz Wi-Fi bandpass filter includes a ladder filter circuit with two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs. Each of the two or more shunt XBARS includes a diaphragm having an LN-equivalent thickness greater than or equal to 360 nm, and each of the two or more series XBARS includes a diaphragm having an LN-equivalent thickness less than or equal to 375 nm.