H03H2003/027

Plate wave devices with wave confinement structures and fabrication methods
10374573 · 2019-08-06 · ·

A micro-electrical-mechanical system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.

Multi-frequency guided wave devices and fabrication methods
10348269 · 2019-07-09 · ·

A micro-electrical-mechanical system (MEMS) guided wave device includes a piezoelectric layer including multiple thinned regions of different thicknesses each bounding in part a different recess, different groups of electrodes on or adjacent to different thinned regions and arranged for transduction of lateral acoustic waves of different wavelengths in the different thinned regions, and at least one bonded interface between the piezoelectric layer and a substrate. Optionally, a buffer layer may be intermediately bonded between the piezoelectric layer and the substrate. Methods of producing such devices include locally thinning a piezoelectric layer to define multiple recesses, bonding the piezoelectric layer on or over a substrate layer to cause the recesses to be bounded in part by either the substrate or an optional buffer layer, and defining multiple groups of electrodes on or over the different thinned regions.

FREQUENCY-CONVERTING SUPER-REGENERATIVE TRANSCEIVER
20190207557 · 2019-07-04 · ·

The present disclosure provides a frequency-converting super regenerative transceiver with a frequency mixer coupled to a resonator and a feedback element having a controllable gain. The frequency-converting super-regenerative transceiver utilizes the frequency mixer to shift the incoming frequencies, based on a controlled oscillator, to match the frequency of operation of the super-regenerative transceiver. The frequency-converting super-regenerative transceivers described herein permit signal data capture over a broad range of frequencies and for a range of communication protocols. The frequency-converting super-regenerative transceivers described herein are tunable, consume very little power for operation and maintenance, and permit long term operation even when powered by very small power sources (e.g., coin batteries).

5.5 GHz WI-FI 5G COEXISTENCE ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT
20190199316 · 2019-06-27 ·

An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Piezoelectric vibrator and piezoelectric vibrating apparatus

A piezoelectric vibrator that includes a piezoelectric film with a pair of electrodes disposed on opposing sides of the piezoelectric film. Moreover, the vibrator includes first and second adjustment films with the first adjustment film covering the first surface of the piezoelectric film in a first region and the second adjustment film covering the first surface of the piezoelectric film in a second region that is different from the first region. Moreover, the second region of the piezoelectric film has a greater displacement than the first region when the piezoelectric vibrator vibrates.

Guided wave devices with selectively loaded piezoelectric layers
10326426 · 2019-06-18 · ·

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

Ceramic temperature-compensated resonator

A temperature-compensated resonator including a body used in deformation, and a core of the body is formed by a material that is one of glass, ceramic glass, technical ceramic, and metallic glass. At least one part of the body includes a coating whose Young's modulus variation with temperature is of an opposite sign to that of the material used for the core, so that at least a first order frequency variation with temperature of the resonator is substantially zero.

Piezo-actuated MEMS Resonator

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

Guided wave devices with sensors utilizing embedded electrodes
10305442 · 2019-05-28 · ·

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

Mixed domain guided wave devices utilizing embedded electrodes
10305443 · 2019-05-28 · ·

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.