A monolithic integration of phase change material (PCM) switches with a MEMS resonator is provided to implement switching and reconfiguration functionalities. MEMS resonator includes a piezoelectric material to control terminal connections to the electrodes. The PCM is operable between an ON state and an OFF state by application of heat, which causes the phase change material to change from an amorphous state to a crystalline state or from a crystalline state to an amorphous state, the amorphous state and the crystalline state each associated with one of the ON state and the OFF state. A method of fabricating the MEMS resonator with phase change material is provided. A reconfigurable filter system using the MEMS resonators is also provided.

A producing method for a diaphragm-type resonant MEMS device includes forming a first silicon oxide film, forming a second silicon oxide film, forming a lower electrode, forming a piezoelectric film, forming an upper electrode, laminating the first silicon oxide film, the second silicon oxide film, the lower electrode, the piezoelectric film, and the upper electrode in this order on a first surface of a silicon substrate, and etching the opposite side surface of the first surface of the silicon substrate by deep reactive ion etching to form a diaphragm structure, in which the proportion R.sub.2 of the film thickness t.sub.2 of the second silicon oxide film with respect to the sum of the film thickness t.sub.1 of the first silicon oxide film and the film thickness t.sub.2 of the second silicon oxide film satisfies the following condition:
0.10 mt.sub.12.00 m; and
R.sub.20.70.

A deep trench (DT) MEMS resonator includes a periodic array of unit cells, each of which includes a single DT formed in a semiconductor substrate and filled with a material whose acoustic impedance is different than that of the substrate. The filled DT is used as both an electrical capacitor and a mechanical structure at the same time, making it an elegant design that reduces footprint and fabrication complexity. Adding a second DT to each unit cell in a DT MEMS resonator forms a dual-trench DT (DTDT) MEMS resonator. In a DTDT unit cell, the first DT is filled with a conductor to sense, conduct, and/or generate an acoustic wave. The second DT in the DTDT unit cell is filled with an insulator. The width, filling, etc. of the second DT in the DTDT unit cell can be selected to tune the acoustic passband of the DTDT unit cell.

A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate. A two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric plate in response to an alternating voltage applied through the interdigitated electrode. The two-dimensional mode of mechanical vibration is a cross-sectional Lam mode resonance (CLMR) or a degenerate cross-sectional Lam mode resonance (dCLMR).

A resonator including a piezoelectric plate and an interdigital electrode is provided. A ratio between a thickness of the plate and a pitch of the interdigital electrode may be from about 0.5 to about 1.5. A radiation detector including a resonator and an absorber layer capable of absorbing at least one of infrared and terahertz radiation is provided. A resonator including a piezoelectric plate and a two-dimensional electrically conductive material is provided.

A bulk acoustic wave MEMS resonator device includes at least one functionalization (e.g., specific binding or non-specific binding) material arranged over a top side electrode, with at least one patterned enhanced surface area element arranged between a lower surface of the top side electrode and the functionalization material. The at least one patterned enhanced surface area element increases non-planarity of the at least one functionalization material, thereby providing a three-dimensional structure configured to increase sensor surface area and reduce analyte diffusion distance, and may also promote fluid mixing. Methods for biological and chemical sensing, and methods for forming MEMS resonator devices and fluidic devices are further disclosed.

A single crystal micromechanical resonator includes a suspended plate of lithium niobate or lithium tantalate. The suspended plate and a support structure are formed from a single crystal.

In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.

A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.