Various embodiments may relate to an acoustic resonator. The acoustic resonator may include a piezoelectric layer. The acoustic resonator may also include a first electrode in contact with a first surface of the piezoelectric layer. The acoustic resonator may further include a plurality of dielectric structures in contact with the first surface of the piezoelectric layer. The acoustic resonator may additionally include a second electrode in contact with a second surface of the piezoelectric layer opposite the first surface. The first electrode may include a plurality of electrode structures. A dielectric structure of the plurality of dielectric structures may be in contact with a pair of neighboring electrode structures of the plurality of electrode structures.

A method for producing an elastic wave device includes steps of (a) preparing a first substrate and a second substrate, (b) irradiating a bonding surface of the first substrate and a bonding surface of the second substrate with one of plasma, neutral atom beams, and ion beams of an inert gas, (c) bonding the bonding surface of the first substrate and the bonding surface of the second substrate in a vacuum at room temperature so as to set a strength that allows the first and second substrates to be separated by insertion of a blade; (d) forming a composite substrate by bonding a piezoelectric substrate to another surface of the first substrate; (e) forming electrode on a surface of the piezoelectric substrate of the composite substrate; and then (f) removing the second substrate from the first substrate by separation with the blade.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A vibrator device includes: a base; a vibrator disposed in the base; and a lid including a substrate having a light transmitting property and a silicon substrate joined to the substrate and a part of the base surrounding the vibrator.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

Methods of forming a shear-mode acoustic wave filter on V-shaped grooves of a [100] crystal orientation Si layer over a substrate and the resulting devices are provided. Embodiments include forming a set of V-shaped grooves in a [100] crystal orientation Si layer over a substrate; and forming a shear-mode acoustic wave filter over the V-shaped grooves, the shear-mode acoustic wave filter including a first metal layer, a thin-film piezoelectric layer, and a second metal layer, wherein the second metal layer is an IDT pattern or a sheet.

A method of manufacturing an integrated circuit. This method includes forming an epitaxial material comprising single crystal piezo material overlying a surface region of a substrate to a desired thickness and forming a trench region to form an exposed portion of the surface region through a pattern provided in the epitaxial material. Also, the method includes forming a topside landing pad metal and a first electrode member overlying a portion of the epitaxial material and a second electrode member overlying the topside landing pad metal. Furthermore, the method can include processing the backside of the substrate to form a backside trench region exposing a backside of the epitaxial material and the landing pad metal and forming a backside resonator metal material overlying the backside of the epitaxial material to couple to the second electrode member overlying the topside landing pad metal.

A method of forming a resonator includes forming top and bottom dielectric structures over a substrate. A piezoelectric layer is formed between the top and bottom dielectric structures. A bottom electrode is formed between the piezoelectric layer and the bottom dielectric structure, and a top electrode is formed between the piezoelectric layer and the top dielectric structure. A metal layer is formed over the top dielectric structure and is patterned, thereby forming a first contact pad making electrical contact to the top electrode, a second contact pad making electrical contact with the bottom electrode, and a mass bias located over the top dielectric structure.