A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

A method for manufacturing a film bulk acoustic resonance device is disclosed. The proposed method, wherein the device has a specific resonant frequency, includes: providing a substrate having a recess, wherein the recess has a height; configuring a first piezoelectric material layer on the substrate, and causing the recess to form an air gap; configuring a lower electrode on the first piezoelectric material layer; when the height is in a first range, causing a resonant frequency of the film bulk acoustic resonance device versus the height to have a first slope; when the height is in a second range, causing the resonant frequency versus the height to have a second slope; and causing the first slope to be smaller than the second slope.

A method for manufacturing a film bulk acoustic resonance device is disclosed. The proposed method, wherein the device has a specific resonant frequency, includes: providing an upper electrode; providing a lower electrode; configuring a first piezoelectric material layer between the upper electrode and the lower electrode; configuring a resonant frequency determining metal layer on the upper electrode, wherein the resonant frequency determining metal layer has a thickness; causing a resonant frequency of the film bulk acoustic resonance device and the thickness to form a curve; and when the thickness on the curve changes linearly, causing the resonant frequency to change non-linearly.

A method for manufacturing a film bulk acoustic resonance device is disclosed. The proposed method, wherein the device has a specific resonant frequency, includes: providing an upper electrode; providing a lower electrode; configuring a first piezoelectric material layer between the upper electrode and the lower electrode; configuring a resonant frequency determining metal layer on the upper electrode, wherein the resonant frequency determining metal layer has a thickness; causing a resonant frequency of the film bulk acoustic resonance device and the thickness to form a curve; and when the thickness on the curve changes linearly, causing the resonant frequency to change non-linearly.

An acoustic wave resonator includes a support substrate, a piezoelectric layer that is disposed on the support substrate and is a rotated Y-cut X-propagation lithium tantalate of which a cut angle is within a range of greater than 50° and less than 150°, and a pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, an average pitch of the electrode fingers of one of the comb-shaped electrodes being equal to or greater than ½ of a thickness of the piezoelectric layer.

An acoustic wave resonator includes a support substrate, a piezoelectric layer that is disposed on the support substrate and is a rotated Y-cut X-propagation lithium tantalate of which a cut angle is within a range of greater than 50° and less than 150°, and a pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, an average pitch of the electrode fingers of one of the comb-shaped electrodes being equal to or greater than ½ of a thickness of the piezoelectric layer.

Techniques for improving acoustic wave device structures are disclosed, including filters and systems that may include such devices. An apparatus may comprise a first electrical filter including an acoustic wave device. The first electrical may having a first filter band in a Super High Frequency (SHF) band or an Extremely High Frequency (EHF) band to facilitate compliance with a regulatory requirement or a standards setting organization specification. For example, the first electrical filter may comprise a notch filter having a notch band overlapping at least a portion of an Earth Exploration Satellite Service (EESS) band to facilitate compliance with a regulatory requirement or the standards setting organization specification for the Earth Exploration Satellite Service (EESS) band.

Filters and methods of making filters are disclosed. A filter device includes a substrate, a piezoelectric plate, and an acoustic Bragg reflector between a surface of the substrate and a back surface of the piezoelectric plate. A first portion of the piezoelectric plate has a first thickness, and a second portion of the piezoelectric plate has a second thickness less than the first thickness. A conductor pattern on front surfaces of the first and second portions of the piezoelectric plate includes a first interdigital transducer (IDT) with interleaved fingers on the first portion, and a second IDT with interleaved fingers on the second portion.