Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including fluidic systems, oscillators and systems that may include such devices. A bulk acoustic wave (BAW) resonator may comprise a substrate and a first layer of piezoelectric material. The bulk acoustic wave (BAW) resonator may comprise a top electrode. A sensing region may be acoustically coupled with the top electrode of the bulk acoustic wave (BAW) resonator.

Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion and having a different resonator thickness. Each wing may also have different thicknesses from one another. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.

Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion and having a different resonator thickness. Each wing may also have different thicknesses from one another. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.

A vibrator device includes: a base; a vibrator disposed in the base; and a lid including a substrate having a light transmitting property and a silicon substrate joined to the substrate and a part of the base surrounding the vibrator.

A vibrator device includes: a base; a vibrator disposed in the base; and a lid including a substrate having a light transmitting property and a silicon substrate joined to the substrate and a part of the base surrounding the vibrator.

Bulk acoustic wave resonators of two or more different filters can be on a common die. The two filters can be included in a multiplexer, such as a duplexer, or implemented as standalone filters. With bulk acoustic wave resonators of two or more filters on the same die, the filters can be implemented in less physical space compared to implementing the same filters of different die. Related methods, radio frequency systems, radio frequency modules, and wireless communication devices are also disclosed.

A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

The piezoelectric effect is a well-known phenomenon inherent in some crystal compounds. Silicon dioxide in nature forms a natural hexagonal crystal. The same material when heated to a molten state and then rapidly cooled becomes common glass with no piezoelectric effect. The phenomenon is an electrical or electron relationship to the crystal in that when the modulus is changed the state of electrical charge also changes and in two modalities. If you apply an electrical charge the crystal will change shape and if you change the shape the crystal it will cause an electrical charge.

The device being presented is part of a larger thesis of the phenomenon in that it is presenting mechanical interactivity from low to ultrahigh frequencies. It was also discovered that the reactance of the crystal can be produced under magnetic pressure such that stacking crystals between strong magnets called unit/cells and connecting them in a series/parallel wired conductive arrangement can produce an amplification such that all frequencies of electrical activity in the environment are amplified and produce a rectifiable current flow of electrons.

Envisioned are many possible embodiments of this device. One such embodiment is the application of a coupled toroidal coil that enhances the signals in the environment and magnetically couples the signal into the device.

This device has been prototyped and functions as described. The output characteristics beyond what has been described are not disclosed and are considered proprietary information.

The piezoelectric effect is a well-known phenomenon inherent in some crystal compounds. Silicon dioxide in nature forms a natural hexagonal crystal. The same material when heated to a molten state and then rapidly cooled becomes common glass with no piezoelectric effect. The phenomenon is an electrical or electron relationship to the crystal in that when the modulus is changed the state of electrical charge also changes and in two modalities. If you apply an electrical charge the crystal will change shape and if you change the shape the crystal it will cause an electrical charge.

The device being presented is part of a larger thesis of the phenomenon in that it is presenting mechanical interactivity from low to ultrahigh frequencies. It was also discovered that the reactance of the crystal can be produced under magnetic pressure such that stacking crystals between strong magnets called unit/cells and connecting them in a series/parallel wired conductive arrangement can produce an amplification such that all frequencies of electrical activity in the environment are amplified and produce a rectifiable current flow of electrons.

Envisioned are many possible embodiments of this device. One such embodiment is the application of a coupled toroidal coil that enhances the signals in the environment and magnetically couples the signal into the device.

This device has been prototyped and functions as described. The output characteristics beyond what has been described are not disclosed and are considered proprietary information.