A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

A method of manufacture for an acoustic resonator or filter device. In an example, the present method can include forming metal electrodes with different geometric areas and profile shapes coupled to a piezoelectric layer overlying a substrate. These metal electrodes can also be formed within cavities of the piezoelectric layer or the substrate with varying geometric areas. Combined with specific dimensional ratios and ion implantations, such techniques can increase device performance metrics. In an example, the present method can include forming various types of perimeter structures surrounding the metal electrodes, which can be on top or bottom of the piezoelectric layer. These perimeter structures can use various combinations of modifications to shape, material, and continuity. These perimeter structures can also be combined with sandbar structures, piezoelectric layer cavities, the geometric variations previously discussed to improve device performance metrics.

A resonator device includes a base substrate including a principal surface, a side surface, and an inclined surface that couples the principal surface to the side surface and that is inclined with respect to the principal surface and the side surface, a resonator element arranged on the principal surface of the base substrate, and a lid that is bonded to the principal surface of the base substrate and accommodates the resonator element between the lid and the base substrate. A bonding area in which the base substrate and the lid are bonded is positioned inside an outer edge of the principal surface.

A resonator device includes a base substrate including a principal surface, a side surface, and an inclined surface that couples the principal surface to the side surface and that is inclined with respect to the principal surface and the side surface, a resonator element arranged on the principal surface of the base substrate, and a lid that is bonded to the principal surface of the base substrate and accommodates the resonator element between the lid and the base substrate. A bonding area in which the base substrate and the lid are bonded is positioned inside an outer edge of the principal surface.

Acoustic filters, resonators and methods of making acoustic filters are disclosed. An acoustic resonator device includes a substrate. A back surface of a piezoelectric plate is attached to the substrate, a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDTs) with interleaved fingers of the IDT disposed on the diaphragm. A ratio of the mark of the interleaved fingers to the pitch of the interleaved fingers is greater than or equal to 0.2 and less than or equal to 0.3.

Acoustic filters, resonators and methods of making acoustic filters are disclosed. An acoustic resonator device includes a substrate. A back surface of a piezoelectric plate is attached to the substrate, a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. A conductor pattern is formed on the front surface of the piezoelectric plate, the conductor pattern including an interdigital transducer (IDTs) with interleaved fingers of the IDT disposed on the diaphragm. A ratio of the mark of the interleaved fingers to the pitch of the interleaved fingers is greater than or equal to 0.2 and less than or equal to 0.3.

Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. A top acoustic reflector including a first pair of top metal electrode layers may be electrically and acoustically coupled with the first layer of piezoelectric material to excite the piezoelectrically excitable main resonance mode at a resonant frequency.

The present invention provides a technique for making a film bulk acoustic resonator with ease, at low cost. A film bulk acoustic resonator, according to one aspect of the present disclosure has: a substrate having a first main surface; an oxide film provided over the first main surface; and a laminated film provided over the oxide film and including a first electrode, a piezoelectric layer, and a second electrode laminated in this order, and, in this film bulk acoustic resonator, a void where the oxide film is removed is provided between the substrate and the first electrode, and the piezoelectric layer has a through-hole that communicates with the void.

Lateral field excitation acoustic resonators and methods of manufacture are disclosed. In one aspect, an acoustically resonating material such as a piezoelectric film or membrane is spaced from a substrate by electrodes having an air gap therebetween. When current flows through the electrodes, lateral field acoustic waves are excited in the resonating material with relatively good coupling and adequate heat dissipation.

Lateral field excitation acoustic resonators and methods of manufacture are disclosed. In one aspect, an acoustically resonating material such as a piezoelectric film or membrane is spaced from a substrate by electrodes having an air gap therebetween. When current flows through the electrodes, lateral field acoustic waves are excited in the resonating material with relatively good coupling and adequate heat dissipation.