Filter devices are disclosed. A filter device includes a piezoelectric plate comprising a supported portion, a first diaphragm, and a second diaphragm. The supported portion is attached to a substrate and the first and second diaphragms spans respective cavities in the substrate. A first interdigital transducer (IDT) has interleaved fingers on the first diaphragm. A second interdigital transducer (IDT) has interleaved fingers on the second diaphragm. A first dielectric layer is between the interleaved fingers of the first IDT, and a second dielectric layer is between the interleaved fingers of the second IDT. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. The piezoelectric plate and the first and second IDTs are configured such that radio frequency signals applied to first and second IDTs excite primary shear acoustic modes in the respective diaphragms.

A vibration element includes: a quartz crystal substrate having a first vibration part and a second vibration part; a pair of first excitation electrodes formed at two main surfaces of the quartz crystal substrate, at the first vibration part; and a pair of second excitation electrodes formed in such a way as to sandwich the second vibration part in a direction of thickness of the quartz crystal substrate, at the second vibration part. At least one second excitation electrode of the pair of second excitation electrodes is formed at an inclined surface inclined to at least one of the two main surfaces.

An acoustic wave resonator includes a support substrate, a piezoelectric layer that is disposed on the support substrate and is a rotated Y-cut X-propagation lithium tantalate of which a cut angle is within a range of greater than 50° and less than 150°, and a pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, an average pitch of the electrode fingers of one of the comb-shaped electrodes being equal to or greater than ½ of a thickness of the piezoelectric layer.

An acoustic wave resonator includes a support substrate, a piezoelectric layer that is disposed on the support substrate and is a rotated Y-cut X-propagation lithium tantalate of which a cut angle is within a range of greater than 50° and less than 150°, and a pair of comb-shaped electrodes disposed on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, an average pitch of the electrode fingers of one of the comb-shaped electrodes being equal to or greater than ½ of a thickness of the piezoelectric layer.

Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer is formed on the front surface of the piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. At least a portion of a perimeter of the cavity is curved and at least one end zone of the perimeter of the cavity is round.

Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer is formed on the front surface of the piezoelectric plate with interleaved fingers of the IDT disposed on the diaphragm. At least a portion of a perimeter of the cavity is curved and at least one end zone of the perimeter of the cavity is round.

The vibrator element includes at least one vibrating arm, and a weight provided to the vibrating arm, the weight is provided with at least one processing scar, when an axis which overlaps a center in a width direction of the vibrating arm, and which extends along an extending direction of the vibrating arm is a central axis, and an axis which overlaps a centroid of the vibrating arm, and which extends along the extending direction of the vibrating arm is a centroid axis, the processing scar is formed in at least an area at the centroid axis side with respect to the central axis, and S1>S2 an area of the processing scar located at the centroid axis side with respect to the central axis is S1, and an area of the processing scar located at an opposite side to the centroid axis with respect to the central axis is S2.

The vibrator element includes a vibrating arm provided with an arm part, and a weight part which has a weight, the weight is provided with at least one processing scar, when an axis which overlaps a center in a width direction of the vibrating arm, and which extends along an extending direction of the vibrating arm is a central axis, and an axis which overlaps a centroid of the vibrating arm, and which extends along the extending direction of the vibrating arm is a centroid axis, the processing scar is formed in at least an area at an opposite side to the centroid axis, and S1<S2 an area of the processing scar located at the centroid axis side with respect to the central axis is S1, and an area of the processing scar located at an opposite side to the centroid axis with respect to the central axis is S2.

The vibrator element includes a vibrating arm provided with an arm part, and a weight part which has a weight, the weight is provided with at least one processing scar, when an axis which overlaps a center in a width direction of the vibrating arm, and which extends along an extending direction of the vibrating arm is a central axis, and an axis which overlaps a centroid of the vibrating arm, and which extends along the extending direction of the vibrating arm is a centroid axis, the processing scar is formed in at least an area at an opposite side to the centroid axis, and S1<S2 an area of the processing scar located at the centroid axis side with respect to the central axis is S1, and an area of the processing scar located at an opposite side to the centroid axis with respect to the central axis is S2.

Acoustic resonators and filter devices, and method of making acoustic resonators and filter devices. An acoustic resonator includes a substrate having a surface and a piezoelectric plate having front and back surfaces, the back surface attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The interleaved fingers have an irregular hexagon cross-sectional shape.