An elastic wave device in which an IDT electrode defines an excitation electrode on a piezoelectric layer, an acoustic reflection layer is laminated on a first main surface of the piezoelectric layer, the acoustic reflection layer includes high acoustic impedance layers with a relatively high acoustic impedance and low acoustic impedance layers with a relatively low acoustic impedance, and the acoustic reflection layer has an unwanted wave reflection suppression structure in which reflection of unwanted waves toward the piezoelectric layer side is significantly reduced or prevented.

In order to improve heat dissipation from electrical components with heat-generating component structures, it is proposed to provide a radiation layer with a large surface in the area of the component structures. Preferably, the radiation layer is very heat-conductive or in heat-conductive connection with the component structures.

In order to improve heat dissipation from electrical components with heat-generating component structures, it is proposed to provide a radiation layer with a large surface in the area of the component structures. Preferably, the radiation layer is very heat-conductive or in heat-conductive connection with the component structures.

An electroacoustic resonator (EAR) that allows an RF filter having a large bandwidth is provided. The resonator comprises a piezoelectric material (PM) and an electrode structure (ES, EF) on the piezoelectric material. The piezoelectric material is lithium niobate and has a crystal cut defined by the Euler angles (0°, 80° to 88°, 0°).

An apparatus is disclosed for a surface-acoustic-wave filter that suppresses intermodulation distortion. In an example aspect, the apparatus includes a surface-acoustic-wave filter including an electrode structure and at least one layer of quartz material with a thickness having a range approximately from 100 to 300 micrometers. The apparatus also includes at least one layer of lithium niobate (LiNbO3) material disposed between the electrode structure and the quartz material. A thickness of the lithium niobate material has a range approximately from 0.2 to 0.4 micrometers.

An apparatus is disclosed for a surface-acoustic-wave filter that suppresses intermodulation distortion. In an example aspect, the apparatus includes a surface-acoustic-wave filter including an electrode structure and at least one layer of quartz material with a thickness having a range approximately from 100 to 300 micrometers. The apparatus also includes at least one layer of lithium niobate (LiNbO3) material disposed between the electrode structure and the quartz material. A thickness of the lithium niobate material has a range approximately from 0.2 to 0.4 micrometers.

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

A microelectromechanical resonator device is provided having two-dimensional resonant rods. The resonator device has a piezoelectric layer formed with a plurality of alternating rods and trenches. A bottom electrode is in contact with a bottom surface of the piezoelectric layer. A top electrode metal grating of conductive strips is aligned in contact with corresponding rods of the piezoelectric layer.

A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.

A composite substrate includes a supporting substrate and a functional substrate that are directly joined together, the supporting substrate being a sintered sialon body.