An acoustic wave device includes a support substrate and first and second resonant sections adjacent to each other on the support substrate. Each of the first and second resonant sections includes a piezoelectric thin film, an IDT electrode on the piezoelectric thin film, and a support layer surrounding the piezoelectric thin film in a plan view of the acoustic wave device. The support layer has a different linear expansion coefficient from the piezoelectric thin film. The piezoelectric thin film in the first resonant section and the piezoelectric thin film in the second resonant section are divided by the support layer between the resonant section and the resonant section.

An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a support provided on the piezoelectric substrate so as to surround the IDT electrode, and a cover provided on the support. The support has a larger thermal expansion coefficient than the piezoelectric substrate. The IDT electrode is provided in a hollow space that is surrounded by the piezoelectric substrate, the support, and the cover. The support includes an inner surface on a side of the hollow space, and an outer surface on a side opposite to the inner surface, and the support includes a recess provided in at least one of the inner and outer surfaces.

An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a support provided on the piezoelectric substrate so as to surround the IDT electrode, and a cover provided on the support. The support has a larger thermal expansion coefficient than the piezoelectric substrate. The IDT electrode is provided in a hollow space that is surrounded by the piezoelectric substrate, the support, and the cover. The support includes an inner surface on a side of the hollow space, and an outer surface on a side opposite to the inner surface, and the support includes a recess provided in at least one of the inner and outer surfaces.

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

Aspects of this disclosure relate to a surface acoustic wave resonator. The surface acoustic wave resonator includes a piezoelectric substrate, interdigital transducer electrodes formed on an upper surface of the piezoelectric substrate, a dielectric temperature compensation layer formed on the piezoelectric substrate to cover the interdigital transducer electrodes, and a dielectric passivation layer over the temperature compensation layer. The passivation layer may include an oxide layer configured to have a sound velocity greater than that of the temperature compensation layer to suppress a transverse signal transmission.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.