Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness D.sub.CU defined by 0.12PD.sub.CU0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness D.sub.OX defined by 3.1D.sub.CUD.sub.OX4.5D.sub.CU.

Surface acoustic wave (SAW) resonator, SAW filters, and methods of fabricating SAW filters. A first plurality of parallel conductors extending from a first bus bar are formed on a surface of a 128-degree Y-cut lithium niobate substrate. A second plurality of parallel conductors extending from a second bus bar are formed on the surface of the substrate, the second plurality of parallel conductors interleaved with the first plurality of parallel conductors. An SiO2 layer overlays the first and second pluralities of parallel conductors. The first and second pluralities of parallel conductors are substantially copper and have a thickness D.sub.CU defined by 0.12PD.sub.CU0.24P, where P is a center-to-center spacing of adjacent parallel conductors. The SiO2 layer has a thickness D.sub.OX defined by 3.1D.sub.CUD.sub.OX4.5D.sub.CU.

A process for fabricating a substrate for a radiofrequency device by joining a piezoelectric layer to a carrier substrate by way of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, the process being characterized in that it comprises the following steps: providing a piezoelectric substrate having a rough surface for reflecting a radiofrequency wave, depositing a dielectric layer on the rough surface of the piezoelectric substrate, providing a carrier substrate, depositing a photo-polymerizable adhesive layer on the carrier substrate, bonding the piezoelectric substrate to the carrier substrate by way of the dielectric layer and of the adhesive layer, in order to form an assembled substrate, irradiating the assembled substrate with a light flux in order to polymerize the adhesive layer, the adhesive layer and the dielectric layer together forming the electrically insulating layer.

A process for fabricating a substrate for a radiofrequency device by joining a piezoelectric layer to a carrier substrate by way of an electrically insulating layer, the piezoelectric layer having a rough surface at its interface with the electrically insulating layer, the process being characterized in that it comprises the following steps: providing a piezoelectric substrate having a rough surface for reflecting a radiofrequency wave, depositing a dielectric layer on the rough surface of the piezoelectric substrate, providing a carrier substrate, depositing a photo-polymerizable adhesive layer on the carrier substrate, bonding the piezoelectric substrate to the carrier substrate by way of the dielectric layer and of the adhesive layer, in order to form an assembled substrate, irradiating the assembled substrate with a light flux in order to polymerize the adhesive layer, the adhesive layer and the dielectric layer together forming the electrically insulating layer.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (R.sub.a) of 11 angstroms or less.

A method of reducing non-uniformity in the resonance frequencies of a surface acoustic wave (SAW) device, the SAW device comprising a silicon oxide layer comprising an oxide of silicon deposited over interdigital transducers on a piezoelectric substrate by reactive sputtering. The method comprises positioning a piezoelectric substrate having interdigital transducers on a substrate support, then depositing a silicon oxide layer comprising an oxide of silicon over the piezoelectric substrate and the interdigital transducers to form a SAW device. The substrate support is positioned relative to a sputtering target so that the silicon oxide layer of the SAW device has an arithmetic mean surface roughness (R.sub.a) of 11 angstroms or less.

Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.

An elastic wave device includes a supporting substrate, an acoustic reflection layer disposed on the supporting substrate, a piezoelectric layer disposed on the acoustic reflection layer, and an interdigital transducer electrode disposed on the piezoelectric layer. The acoustic reflection layer includes three or more low acoustic impedance layers and two or more high acoustic impedance layers. A film thickness of the low acoustic impedance layer closest to the piezoelectric layer is larger than a film thickness of the low acoustic impedance layer closest to the low acoustic impedance layer that is closest to the piezoelectric layer.