In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

In an acoustic wave device including a piezoelectric material substrate and supporting body bonded with each other through a bonding layer, it is an object to provide the acoustic wave device having the structure for further improving the propagation loss and temperature characteristics of frequency of an acoustic wave. An acoustic wave device includes a piezoelectric material substrate, an electrode on the piezoelectric material substrate, a supporting body, and a bonding layer for bonding the piezoelectric material substrate and the supporting body. The bonding layer is composed of quartz crystal.

A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance T; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance D between adjacent fingers of the same electrode, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. A structure of the silicon in a top portion of the silicon substrate has been modified to reduce carrier lifetime and prevent the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the SAW device.

A bonded wafer with low carrier lifetime in silicon comprises a silicon substrate having opposing top and bottom surfaces; a piezoelectric layer bonded over the top surface of the silicon substrate and having opposing top and bottom surfaces separated by a distance T; and a pair of electrodes having fingers that are inter-digitally dispersed on the top surface of the piezoelectric layer in a pattern having a center-to-center distance D between adjacent fingers of the same electrode, the electrodes comprising a portion of a Surface Acoustic Wave (SAW) device. A structure of the silicon in a top portion of the silicon substrate has been modified to reduce carrier lifetime and prevent the creation of a parasitic conductance within the top portion of the silicon substrate during operation of the SAW device.

In certain aspects, a thin film surface acoustic wave (SAW) die comprises a high-resistivity substrate, a bonding layer on the high-resistivity substrate, and a thin film piezoelectric island on the bonding layer, where an edge of the thin film piezoelectric island is offset from an edge of the bonding layer.

In certain aspects, a thin film surface acoustic wave (SAW) die comprises a high-resistivity substrate, a bonding layer on the high-resistivity substrate, and a thin film piezoelectric island on the bonding layer, where an edge of the thin film piezoelectric island is offset from an edge of the bonding layer.

Trim layers that are configured to adjust one or more operating parameters for surface acoustic wave (SAW) devices are disclosed. A SAW device may include an interdigital transducer (IDT) and a piezoelectric material that are configured to generate an acoustic wave and a trim layer that has an acoustic velocity and a density that correspond to a velocity of the acoustic wave. In this manner, the trim layer may be configured to adjust an electromechanical coupling of the SAW device without significantly impacting a resonance frequency of the SAW device. The SAW device may also include an additional trim layer that is configured to adjust a coupling percentage and the resonance frequency of the SAW device. A SAW device may include a trim layer that is configured to adjust certain operating parameters by greater amounts than other operating parameters.

Trim layers that are configured to adjust one or more operating parameters for surface acoustic wave (SAW) devices are disclosed. A SAW device may include an interdigital transducer (IDT) and a piezoelectric material that are configured to generate an acoustic wave and a trim layer that has an acoustic velocity and a density that correspond to a velocity of the acoustic wave. In this manner, the trim layer may be configured to adjust an electromechanical coupling of the SAW device without significantly impacting a resonance frequency of the SAW device. The SAW device may also include an additional trim layer that is configured to adjust a coupling percentage and the resonance frequency of the SAW device. A SAW device may include a trim layer that is configured to adjust certain operating parameters by greater amounts than other operating parameters.

An apparatus for filtering is disclosed that implements twin double-mode surface-acoustic-wave filters with opposite polarities and a geometric offset. The apparatus includes a first double-mode surface-acoustic-wave structure comprising an electrode structure having a first quantity of fingers and a first pitch. The first double-mode surface-acoustic-wave structure has a first polarity. The apparatus also includes a second double-mode surface-acoustic-wave structure coupled to the first double-mode surface-acoustic-wave structure with a second polarity that is opposite the first polarity. The second double-mode surface-acoustic-wave structure comprises an electrode structure having a second quantity of fingers and a second pitch. The second quantity of fingers is equal to the first quantity of fingers. The second pitch differs from the first pitch by a pitch offset.

An apparatus for filtering is disclosed that implements twin double-mode surface-acoustic-wave filters with opposite polarities and a geometric offset. The apparatus includes a first double-mode surface-acoustic-wave structure comprising an electrode structure having a first quantity of fingers and a first pitch. The first double-mode surface-acoustic-wave structure has a first polarity. The apparatus also includes a second double-mode surface-acoustic-wave structure coupled to the first double-mode surface-acoustic-wave structure with a second polarity that is opposite the first polarity. The second double-mode surface-acoustic-wave structure comprises an electrode structure having a second quantity of fingers and a second pitch. The second quantity of fingers is equal to the first quantity of fingers. The second pitch differs from the first pitch by a pitch offset.