Aspects of this disclosure relate to an acoustic wave resonator with a patterned conductive layer. The acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode can include a bus bar and fingers extending from the bus bar. The fingers can each include an edge portion and a body portion. The patterned conductive layer can overlap the edge portions of the fingers. The patterned conductive layer can conductive portions that are spaced apart from each other. A portion of the temperature compensation layer can be positioned between the patterned conductive layer and the interdigital transducer electrode.

A surface acoustic wave resonator device and method for manufacturing the same and filter, the surface acoustic wave resonator device includes: a piezoelectric substrate; an interdigital transducer, disposed on the piezoelectric substrate and comprising a first interdigital electrode structure and a second interdigital electrode structure, wherein each interdigital electrode structure comprises an interdigital electrode and an interdigital electrode lead-out part connected with each other; and a first temperature compensation layer, disposed on the piezoelectric substrate and comprising a body part and a protruding part, wherein the body part covers the interdigital transducer, the protruding part is protruded from the body part towards the piezoelectric substrate in a third direction perpendicular to a main surface of the piezoelectric substrate, and is surrounded by the piezoelectric substrate in a direction parallel to the main surface of the piezoelectric substrate.

A surface acoustic wave resonator device and method for manufacturing the same and filter, the surface acoustic wave resonator device includes: a piezoelectric substrate; an interdigital transducer, disposed on the piezoelectric substrate and comprising a first interdigital electrode structure and a second interdigital electrode structure, wherein each interdigital electrode structure comprises an interdigital electrode and an interdigital electrode lead-out part connected with each other; and a first temperature compensation layer, disposed on the piezoelectric substrate and comprising a body part and a protruding part, wherein the body part covers the interdigital transducer, the protruding part is protruded from the body part towards the piezoelectric substrate in a third direction perpendicular to a main surface of the piezoelectric substrate, and is surrounded by the piezoelectric substrate in a direction parallel to the main surface of the piezoelectric substrate.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A method of designing an acoustic microwave filter in accordance with frequency response requirements comprises generating a modeled filter circuit design having a plurality of circuit elements comprising an acoustic resonant element defined by an electrical circuit model that comprises a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss. The method further comprises optimizing the modeled filter circuit design to generate an optimized filter circuit design, comparing a frequency response of the optimized filter circuit design to the frequency response requirements, and constructing the acoustic microwave filter from the optimized filter circuit design based on the comparison.

A method of designing an acoustic microwave filter in accordance with frequency response requirements comprises generating a modeled filter circuit design having a plurality of circuit elements comprising an acoustic resonant element defined by an electrical circuit model that comprises a parallel static branch, a parallel motional branch, and one or both of a parallel Bragg Band branch that models an upper Bragg Band discontinuity and a parallel bulk mode function that models an acoustic bulk mode loss. The method further comprises optimizing the modeled filter circuit design to generate an optimized filter circuit design, comparing a frequency response of the optimized filter circuit design to the frequency response requirements, and constructing the acoustic microwave filter from the optimized filter circuit design based on the comparison.

A surface acoustic wave device includes: comb electrodes that are provided on a piezoelectric substrate, respectively has a plurality of electrode fingers, a plurality of dummy electrode fingers and a bus bar, edges of the electrode fingers of one of the comb electrodes facing the dummy electrode fingers of the other; and an added film that is provided at least under the bus bar of the comb electrodes and under the electrode fingers and the dummy electrode fingers in a first region and is not provided in a crossing region where the electrode fingers of the one of the comb electrodes and the electrode fingers of the other cross each other, the first region being a region between front edges of the dummy electrodes and edges of the dummy electrodes connected to the bus bar and extending in an alignment direction of the electrode fingers.

A surface acoustic wave device includes: comb electrodes that are provided on a piezoelectric substrate, respectively has a plurality of electrode fingers, a plurality of dummy electrode fingers and a bus bar, edges of the electrode fingers of one of the comb electrodes facing the dummy electrode fingers of the other; and an added film that is provided at least under the bus bar of the comb electrodes and under the electrode fingers and the dummy electrode fingers in a first region and is not provided in a crossing region where the electrode fingers of the one of the comb electrodes and the electrode fingers of the other cross each other, the first region being a region between front edges of the dummy electrodes and edges of the dummy electrodes connected to the bus bar and extending in an alignment direction of the electrode fingers.

The present invention relates to a SAW resonator design method, a SAW filter and a design method therefor, and a computing device-readable recording medium having same recorded thereon, which may improve a quality factor of the SAW resonator by designing a structure, such as an input IDT finger, an output IDT finger, and an interval between fingers in an IDT electrode of the SAW resonator under optimal conditions without changing a material of the SAW resonator or changing a manufacturing process, and may obtain reduced insertion loss and improved frequency characteristics by configuring the SAW filter by using the SAW resonator described above.